Finite temperature effects on the structural stability of Si-doped HfO$_{2}$ using first-principles calculations

Yosuke Harashima,Hiroaki Koga,Zeyuan Ni,Takehiro Yonehara,Michio Katouda,Akira Notake,Hidefumi Matsui,Tsuyoshi Moriya,Mrinal Kanti Si,Ryu Hasunuma,Akira Uedono,Yasuteru Shigeta

DOI: https://doi.org/10.1063/5.0153188

2023-03-27

Abstract:The structural stabilities of the monoclinic and tetragonal phases of Si-doped HfO$_{2}$ at finite temperatures were analyzed using a computational scheme to assess the effects of impurity doping. The finite temperature effects considered in this work represented lattice vibration and impurity configuration effects. The results show that 6% Si doping stabilizes the tetragonal phase at room temperature, although a higher concentration of Si is required to stabilize the tetragonal phase at zero temperature. These data indicate that lattice vibration and impurity configuration effects are important factors determining structural stability at finite temperatures.

Materials Science