Abstract:We have studied the effect of He$^+$ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. The irradiation leads to a strong decrease of the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease of the effective anisotropy constant, which increases the domain wall width. The latter is found to present a perfect scaling with the length-scale of the interaction between domain wall and disorder, $\xi$. On the other hand, the strength of the domain wall-disorder interaction, $f_{pin}$, is weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remain smaller than the domain wall width.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to control the interaction between magnetic domain walls and pinning disorder through mild helium ion (He⁺) irradiation to improve the controllability and performance of magnetic domain walls in Pt/Co/AlOₓ ultrathin films**. Specifically, this research focuses on: 1. **Dynamical behavior of magnetic domain walls (DWs) in the creep region**: The interaction between magnetic domain walls and material defects (i.e., pinning sites) limits their movement speed under low - driving fields, resulting in non - repeatable displacement events. This has become one of the main technical obstacles in applying magnetic domain walls to spintronic devices. 2. **The influence of helium ion irradiation on the dynamics of magnetic domain walls**: Researchers change the microstructure and magnetic properties of materials through helium ion irradiation, thereby affecting the pinning effect of magnetic domain walls. They hope to understand how this irradiation changes the interaction between magnetic domain walls and pinning disorder, especially how to reduce the depinning field so that magnetic domain walls can move under a lower applied magnetic field. 3. **Analysis of microscopic mechanisms**: By combining experimental and theoretical models, researchers attempt to reveal how helium ion irradiation changes the width of magnetic domain walls, the effective anisotropy constant, and the pinning force, and explore the physical mechanisms behind these changes. ### Main findings - **Significant reduction in the depinning field**: As the helium ion irradiation dose increases, the depinning field drops from about 80 mT to 40 mT, which means that magnetic domain walls can start to move under a lower applied magnetic field. - **Increase in the width of magnetic domain walls**: Due to the decrease in the effective anisotropy constant, the width of magnetic domain walls increases significantly, and there is a perfect scaling relationship between this change and the length scale (ξ) of the pinning - disorder interaction. - **Small change in pinning disorder**: Although the strength of the interaction between magnetic domain walls and pinning disorder has changed, the characteristic length scale of the pinning disorder itself has hardly been affected, indicating that helium ion irradiation mainly affects the dynamical behavior of magnetic domain walls by changing their magnetic texture. ### Conclusion Mild helium ion irradiation can significantly reduce the depinning field in Pt/Co/AlOₓ ultrathin films, thereby improving the mobility of magnetic domain walls under low - field conditions. By combining a self - consistent description of creep and depinning dynamics and a scaling model of magnetic domain wall depinning, the research reveals a strong correlation between the length scale of the interaction between magnetic domain walls and pinning disorder and the width of magnetic domain walls. This result indicates that helium ion irradiation mainly regulates the pinning effect of magnetic domain walls by changing the effective anisotropy of the film, while having a small impact on other pinning disorders. This research provides important theoretical and technical support for optimizing the application of magnetic domain walls in spintronic devices.

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