Plasma induced surface modification of sapphire and its influence on graphene grown by PECVD

Miguel Sinusia Lozano,Ignacio Bernat-Montoya,Todora Ivanova Angelova,Alberto Boscá Mojena,Francisco J. Díaz-Fernández,Miroslavna Kovylina,Alejandro Martínez,Elena Pinilla Cienfuegos,Víctor J. Gómez

DOI: https://doi.org/10.3390/nano13131952

2023-03-01

Abstract:The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder its optoelectronic properties. In this work, the influence of the different surface terminations of c-plane sapphire substrates on the synthesis of graphene via plasma-enhanced chemical vapour deposition (PECVD) is studied. The different terminations of the sapphire surface are controlled by a plasma etching process. A design of experiments (DoE) procedure was carried out to evaluate the major effects governing the etching process of four different parameters: i.e. discharge power, time, pressure and gas employed. In the characterization of the substrate, two sapphire surface terminations were identified and characterized by means of contact angle measurements, being a hydrophilic (hydrophobic) surface the fingerprint of an Al- (OH-) terminated surface, respectively. The defects within the synthesized graphene were analysed by Raman spectroscopy. Notably, we found that the ID/IG ratio decreases for graphene grown on OH-terminated surfaces. Furthermore, two different regimes related to the nature of graphene defects were identified and depending on the sapphire terminated surface are bound either to vacancy or boundary like defects. Finally, studying the density of defects and the crystallite area, as well as their relationship with the sapphire surface termination paves the way for increasing the crystallinity of the synthesized graphene.

Materials Science,Applied Physics

What problem does this paper attempt to address?

The paper attempts to address the challenge of synthesizing high-quality graphene on sapphire substrates using plasma-enhanced chemical vapor deposition (PECVD) technology. Specifically, the authors investigate the impact of different surface terminations of sapphire substrates on graphene growth, particularly how to optimize graphene quality by controlling the plasma etching process. These issues include:

1. **Reducing damage during the transfer process**: Traditional graphene synthesis methods usually require transferring graphene from a metal catalyst to an insulating substrate, which can introduce defects in the graphene. Therefore, synthesizing graphene directly on an insulating substrate can avoid these defects.

2. **Improving the optical and electrical properties of graphene**: High-quality graphene is crucial for applications in consumer electronics, and defects can severely affect its performance. Thus, by controlling the surface termination of the sapphire substrate, the crystallinity of graphene can be improved, and defect density can be reduced.

3. **Optimizing PECVD synthesis conditions**: PECVD is a technique that can synthesize graphene at relatively low temperatures, but its synthesis process is influenced by various parameters such as discharge power, time, pressure, and gas type. The authors systematically studied the effects of these parameters on sapphire surface etching and graphene growth using the design of experiments (DoE) method.

4. **Understanding the impact of surface termination on graphene quality**: Different surface terminations of sapphire substrates (e.g., Al-terminated and OH-terminated) affect the growth behavior of graphene. The authors explored the impact of these surface terminations on the types and densities of graphene defects in detail through contact angle measurements and Raman spectroscopy analysis.

In summary, the paper aims to synthesize high-quality graphene on sapphire substrates by controlling the surface termination of the sapphire substrate and optimizing PECVD synthesis conditions, providing a reliable preparation method for future consumer electronics.