Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons

Heather M. Hill,Ching-Chen Yeh,Swapnil M. Mhatre,Ngoc Thanh Mai Tran,Hanbyul Jin,Adam J. Biacchi,Chi-Te Liang,Angela R. Hight Walker,Albert F. Rigosi

DOI: https://doi.org/10.48550/arXiv.2302.14693

2023-03-01

Abstract:We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is heavily mitigated by this polymer-assisted sublimation method. Two widths (100 nm and 50 nm) are examined electrically and optically for both armchair and zigzag GNRs. Our electrical results support the expected behaviors of the GNRs, while the optical signatures of variable strain reveal the subtle differences among all the GNR species measured.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on two aspects:

1. **Improving the growth quality of graphene nanoribbons (GNRs)**: By using the polymer - assisted sublimation growth (PASG) technique, the paper shows how to prepare armchair - type (AC) and zigzag - type (ZZ) graphene nanoribbons with widths of 100 nm and 50 nm respectively on 4H - SiC. This method can effectively suppress step formation and reduce the risk of deformation of GNRs during the growth process, thereby improving their structural and optical properties.

2. **Studying the effects of different strains on GNRs**: The paper studies the performance differences of GNRs with different widths and edge configurations under strain by electrical and optical methods (such as Raman spectroscopy analysis). Specifically, the authors find that ZZ - type GNRs exhibit greater strain compared to AC - type GNRs, which provides new insights into the sensitivity of the strain direction and helps to understand how strain affects the electronic properties of GNRs.

Through these studies, the paper aims to provide important basic data for future GNR device design and manufacturing, especially in the pursuit of high - mobility and ballistic - transport applications.