Abstract:Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opposite ways to these stimuli. By treating them as perturbations of a heteroatomic ladder model based on the tight-binding formalism, we connect the two behaviours to the different symmetries of the top valence and bottom conduction wave functions. These results indicate that opposite and complementary strategies are preferable to engineer the gapwidth of armchair graphene and boron nitride nanoribbons.
What problem does this paper attempt to address?
This paper aims to study how to regulate the band gaps of graphene (Graphene, Gr) and boron nitride (Boron Nitride, BN) armchair - type nanoribbons (Armchair Nanoribbons, ANRs) through different methods. Specifically, the authors explored the influence of the following methods on the band gaps of these two materials:
1. **Application of electric field**: Study the influence of transverse electric field on the band gaps of ABNNRs and AGNRs.
2. **Application of stress**: Analyze the influence of uniaxial stress, biaxial stress and transverse stress on the band gap.
3. **Edge functionalization**: Passivate the edges with hydrogen, and further study the influence of edge electrostatic effect and edge strain effect on the band gap.
### Main findings of the paper
- **Different response mechanisms**: Although graphene and boron nitride nanoribbons are structurally similar, their responses to the above - mentioned stimuli are opposite and complementary. For example, ABNNRs are very sensitive to the electrostatic part of the electric field and edge functionalization, while AGNRs are more sensitive to mechanical stress.
- **Wave function symmetry**: By constructing a heteroatomic ladder model, the authors explained the reasons for this opposite behavior. In ABNNRs, the band - gap - forming states are mainly pure N or B states, while in AGNRs, these states are symmetric or antisymmetric combinations. Therefore, the wave function of ABNNRs is mainly concentrated at the atomic sites and is very sensitive to the on - site energy change (i.e., electrostatic effect); while the wave function of AGNRs extends to the bonds between C atoms and is more sensitive to the change of hopping parameters (i.e., stress).
### Research methods
- **Density functional theory (Density Functional Theory, DFT) calculation**: Used to simulate the band - gap changes of nanoribbons under different conditions.
- **Tight - binding model**: By introducing perturbation terms of electric field, stress and edge functionalization, the influence of these factors on the band gap was analytically studied.
### Conclusion
Through DFT calculations and the analytical and numerical solutions of the tight - binding model, the authors systematically revealed the laws of band - gap changes of graphene and boron nitride armchair - type nanoribbons under different conditions. The research results show that for different materials, different strategies should be adopted to effectively regulate their band gaps to meet the needs of specific applications.
### Formula representation
Some key formulas involved in the paper are as follows:
- **Unperturbed Hamiltonian**:
\[
H_0=\sum_{j,\mu}\epsilon_\mu|\mu, j\rangle\langle\mu, j|+\sum_{\text{n.n.}}t|\mu', j'\rangle\langle\mu, j|
\]
where \(j\) represents the row number, and \(\mu\) represents the atomic site and atomic species (C1 or C2 in AGNRs, B or N in ABNNRs).
- **Band - gap correction**:
\[
\delta E_g=\langle\tilde{n}, +|\delta H|\tilde{n}, +\rangle-\langle\tilde{n}, -|\delta H|\tilde{n}, -\rangle
\]
where \(\delta H\) is the perturbed Hamiltonian, including the contributions of electric field, stress and edge functionalization.
- **Specific band - gap correction formula**:
- For ABNNRs:
\[
\delta E_g = \frac{\epsilon}{E_{2m + 1}}\left(\frac{4\sin^2(\theta_{2m+1})}{N_a + 1}(\delta\epsilon_1-\delta\epsilon_2)+\frac{N_a + 1}{2}
\]