Exploring Layer Thinning of Exfoliated \b{eta}-Tellurene and Room Temperature Photoluminescence with Large Exciton Binding Energy Revealed in TeO2

Ghadeer Aljalham,Sarah Alsaggaf,Shahad Albawardi,Thamer Tabbakh,Frank W. DelRio,Moh. R. Amer

2023-10-07

Abstract:Due to its tunable band gap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming attractive. Here, we report a thinning technique for exfoliated tellurene nanosheets using thermal annealing in an oxygen environment. We characterize different thinning parameters including temperature and annealing time. Based on our measurements, we show that controlled layer thinning occurs in the narrow temperature range of 325 oC to 350 oC. We also show a reliable method to form \b{eta}-tellurene oxide (\b{eta}- TeO2), which is an emerging wide band gap semiconductor with promising electronic and optoelectronic properties. This wide band gap semiconductor exhibits a broad photoluminescence (PL) spectrum with multiple peaks covering the range 1.76 eV to 2.08 eV. This PL emission coupled with Raman spectra are strong evidence of the formation of 2D \b{eta}- TeO2. We discuss the results obtained and the mechanisms of Te thinning and \b{eta}-TeO2 formation at different temperature regimes. We also discuss the optical band gap of \b{eta}-TeO2 and show the existence of pronounced excitonic effects evident by the large exciton binding energy in this 2D \b{eta}-TeO2 system that reach 1.54 eV to 1.62 eV for bulk to monolayer, respectively. Our work can be utilized to have better control over Te nanosheet thickness. It also sheds light on the formation of well-controlled \b{eta}-TeO2 layered semiconductor for electronic and optoelectronic applications.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The paper attempts to address two main issues:

1. **Controlling the layer thickness of Tellurene (Te) nanosheets**:
- Researchers have developed a method to control the layer thickness of exfoliated β-Tellurene (β-Te) nanosheets by high-temperature annealing in an oxygen environment. They studied the effects of different annealing temperatures and times on the thickness of the Tellurene nanosheets and discovered a narrow temperature range (325°C to 350°C) within which controlled layer thinning can be achieved.

2. **Formation of highly luminescent β-Tellurium dioxide (β-TeO₂) nanosheets**:
- At higher annealing temperatures (above 350°C), the Tellurene nanosheets not only thin rapidly but also form a new material—β-Tellurium dioxide (β-TeO₂). This material has a wide bandgap and significant photoluminescence properties, with its photoluminescence spectrum covering the range from 1.76 eV to 2.08 eV. The researchers demonstrated the photoluminescence properties of this material for the first time and discussed its formation mechanism and optical bandgap.

Through these studies, the paper aims to provide a reliable method for controlling the thickness of Tellurene nanosheets and to explore the potential of β-Tellurium dioxide in electronic and optoelectronic applications.