Abstract:Heterostructured colloidal nanocrystals, such as core/shells and dot-in-rods, enable new spectral and dynamic properties otherwise unachievable with single-component nanocrystals or quantum dots (QDs). For example, the electron and hole wavefunctions can be engineered such that they are either both confined in the same domain or (partially) separated over different domains in the heterostructures, which are the so-called type I or (quasi-) type II localization regimes, respectively. A critical factor dictating the carrier localization regime is the band alignment or electronic structure of the heterostructure, which, however, is difficult to measure and hence is often ambiguous. In this work, using CdSe@CdS dot-in-rods (DIRs) as a model system, we show that band edge carrier-doping is a simple-yet-powerful tool to probe the electronic structure of heterostructures. By doping an electron into the CdSe core and then observing whether the doped electron bleaches band edge absorption of only the core or those of both the core and shell, we can easily differentiate the type I and quasi-type II structures. A systematic study of DIRs with various dimensions shows that the extent of electron wavefunction delocalization can be tuned by the core sizes and rod diameters. Comparison with the electronic structure determined from transient absorption measurements also reveals the important role of electron-hole binding in affecting the delocalization of electron wavefunction. In addition to probing the electronic structure, the doped electron allows for studying multi-carrier recombination dynamics in these heterostructures which plays a vital role in their many optical and optoelectronic applications. Specifically, by comparing the band edge exciton recombination kinetics of the doped and neutral DIRs, we can extract the negative trion lifetime, which can be further used to derive the positive trion lifetime when combined with biexciton lifetime measurements. These lifetimes also depend sensitively on the core sizes and rod diameters of the DIRs.

Carrier separation in type II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowire

Green Yellow Light-Emitting-Diodes from Isoelectronically Doped Znse Quantum-Well Structures

Size dependence of biexciton binding energy in strained ZnTe/(Zn,Mg)Te nanowire quantum dots

Effect of electron-hole separation on optical properties of individual Cd(Se,Te) quantum dots

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Preparation and Optical Properties of Core/Shell Type-II CdxZn1-xTe/CdS Quantum Dots

Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots

Carrier Dynamics and Recombination Pathways in Ag-In-Zn-S Quantum Dots

Quasi-Type II Carrier Distribution in CdSe/CdS Core/Shell Quantum Dots with Type I Band Alignment

Exciton-Phonon Coupling in Single ZnCdSe-Dot/CdS-Rod Nanocrystals with Engineered Band Gaps from Type-II to Type-I

Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires

Engineering the hole confinement for CdTe-based quantum dot molecules

Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

ZnTe/CdSe type-II core/shell spherical quantum dot under an external electric field

Synthesis of tetrahedral quasi-type-II CdSe–CdS core–shell quantum dots

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Coupled and decoupled dual quantum systems in one semiconductor nanocrystal.

Carrier-doping as a tool to probe the electronic structure and multi-carrier recombination dynamics in heterostructured colloidal nanocrystals

Charge Transfer Dynamics and Auger Recombination of CdTe/CdS Core/Shell Quantum Dots

Tunable Band Offset and Recombination in ZnO Nanowire–cdte Quantum Dot Heterostructures