Abstract:ZnSe nanowire heterostructures were grown by molecular beam epitaxy in the vapour-liquid-solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc-blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature, cone-shaped nano-needles are formed. For higher growth temperature, the nanowires are uniform and have a high aspect ratio with sizes of 1-2 $\mu$m in length and 20-50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of a nano-needle allows us to obtain very narrow nanorods with a diameter less than 10 nm and a low density of stacking fault defects. These results allow us the insertion of CdSe quantum dots in a ZnSe nanowire. An effcient photon anti-bunching was observed up to 220 K, demonstrating a high-temperature single-photon source.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a highly efficient quantum - dot light source that can generate single photons at relatively high temperatures (up to 220 K). Specifically, the researchers embedded CdSe quantum dots in ZnSe nanowires through molecular beam epitaxy (MBE) technology and optimized the growth conditions to reduce the defect density, thereby achieving efficient single - photon emission. ### Main Problems and Solutions 1. **Requirement for High - Efficiency Single - Photon Source**: - **Background**: Single - photon sources have important application values in quantum information processing, quantum communication and other fields. However, most existing single - photon sources can only work at low temperatures, which limits their practical applications. - **Objective**: To develop a single - photon source that can work at relatively high temperatures, especially a light source that can generate single photons under the condition of 220 K (close to room temperature). 2. **Optimization of Nanowire Structure**: - **Challenge**: Quantum dots in traditional II - VI compound semiconductor nanowires usually have a relatively high defect density, which will affect the quality of single - photon emission. - **Method**: Through a two - step growth method, first generate conical nanoneedles at a lower temperature, and then grow uniform nanowires on their tops at a higher temperature. This method can significantly reduce the defect density, especially in the tip part of the nanowire. 3. **Embedding and Characterization of Quantum Dots**: - **Strategy**: Embed CdSe quantum dots in high - quality ZnSe nanowires and verify their performance through spectral and photon - correlation measurements. - **Result**: The experimental results show that the embedded CdSe quantum dots still exhibit a strong photon anti - bunching effect at temperatures as high as 220 K, indicating their efficient single - photon emission ability. ### Key Conclusions - **Single - Photon Emission Efficiency**: Even at a temperature of 220 K, the single - photon emission quality of CdSe quantum dots is still very high. The normalized value of the photon anti - bunching peak is only 36%, far below 50%, which proves its effectiveness as a single - photon source. - **Structure Optimization**: The nanowires obtained through the two - step growth method have a relatively low defect density, especially in the tip part of the nanowire, which helps to improve the quality of single - photon emission. - **Potential Applications**: This single - photon source that can work at relatively high temperatures provides the possibility for developing compact, stable and cost - effective quantum devices, especially in scenarios where operations are close to room temperature. In conclusion, this paper has successfully achieved a highly efficient single - photon source that can work at relatively high temperatures by optimizing the growth conditions of ZnSe nanowires and embedding CdSe quantum dots in them, providing a new approach for the development of quantum information and communication technologies.

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

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