Synthesis and Pl Properties of Znse Nanowires with Zincblende and Wurtzite Structures

Xia Dong-Yan,Dai Lun,Xu Wan-Jin,You Li-Ping,Zhang Bo-Rui,Ran Guang-Zhao,Qin Guo-Gang
DOI: https://doi.org/10.1088/0256-307x/23/5/070
2006-01-01
Abstract:Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2.71 eV and a deep level emission band peaked at around 2.00 eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.
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