Abstract:We calculate the Kapitza conductance, which is the proportionality coefficient between heat flux and temperature jump at the interface, for the case of two conducting solids separated by the interface. We show that for conducting solids in a non-equilibrium state, there should also arise the electrochemical potential jump at the interface. Hence to describe linear transport at the interface we need three kinetic coefficients: interfacial analogs of electric and heat conductances and interfacial analog of the Seebeck coefficient. We calculate these coefficients for the case of an interface between n-type semiconductors. We perform calculations in the framework of Boltzmann transport theory. We have found out that the interfacial analog of the Seebeck coefficient for some range of parameters of the considered semiconductors, has a high value of about $10^{-3}$ V/K. Thus this effect has the potential to be used for the synthesis of effective thermoelectric materials.

What problem does this paper attempt to address?

The paper primarily focuses on studying the thermoelectric transport properties of electrons at the interface of two n-type semiconductors, particularly exploring the Kapitza conductance and related kinetic coefficients at the interface. Through theoretical calculations, the authors reveal that in a non-equilibrium state, besides the temperature jump, there is also a jump in electrochemical potential, and this phenomenon is crucial for describing the linear transport process. Specifically, the paper addresses the following key issues: 1. **Proposed a new theoretical framework**: Based on the Boltzmann transport equation, a new form is introduced to describe the interfacial thermoelectric effect between two conductive solids. This method, different from the traditional Green's function approach, can be used to calculate three important kinetic coefficients: interfacial electrical conductance, interfacial thermal conductance, and the interfacial analog of the Seebeck coefficient. 2. **Discovered the jump in electrochemical potential**: At the interface, there is not only a temperature jump but also a jump in electrochemical potential. This discovery provides a new perspective for understanding the interfacial thermoelectric effect and is proposed for the first time. 3. **Calculated relevant coefficients**: For the n-type semiconductor interface, the Kapitza conductance and related kinetic coefficients were calculated. Notably, it was found that the interfacial Seebeck coefficient can reach a relatively high value of approximately 10^(-3) V/K within certain parameter ranges, indicating the potential for this effect to be used in synthesizing efficient thermoelectric materials. 4. **Discussed experimental measurement methods**: To facilitate experimental measurement, three easily measurable coefficients were defined: thermal Kapitza conductance, electrical Kapitza conductance, and the interfacial analog of the Seebeck coefficient. The paper also discusses how these coefficients can be applied in practical experimental setups. In summary, through theoretical calculations and analysis, this paper not only enriches our understanding of the interfacial thermoelectric effect but also provides a theoretical foundation and technical guidance for developing new high-efficiency thermoelectric materials.

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