Abstract:Diamond, a wide band gap semiconductor material, has been attracting interest in several fields from electrics and optics to biomedicine and quantum computing due to its outstanding properties. These properties of diamond are related to its unique lattice and optically active defect centers. In this paper, the dependence of nitrogen-vacancy (NV) center on measurement temperature is studied by using the low-temperature photoluminescence (PL) spectroscopy in a temperature range of 80–200 K. The results show that with the increase of the measurement temperature, the zero phonon lines of NV defects are red-shifted, its intensity decreases and its full width at half maximum increases. These results are attributed to the synergetic process of the lattice expansion and quadratic electron-phonon coupling. The NV— and NV0 centers have similar values in the quenching activation energy and the thermal softening coefficient, resulting from their similar structures. The small differences may be associated with the electron-phonon coupling. The broadening mechanism of the NV centers is carefully distinguished by \begin{document}$T^3,\; T^5,\; T^7$\end{document} Voigt function fitting with the relation. These results show that the full width at half maximum of the Gaussian component of NV— and NV0 centers are randomly distributed near 0.1 meV and 2.1 meV, respectively, while the full width at half maximum of the Lorentz component of NV— and NV0 centers increase with measurement temperature increasing. The full width at half maximum of Lorentz of NV— and NV0 centers conform to the \begin{document}$ T^3 $\end{document} relationship. It can be proved that under the action of the fluctuating field, the zero phonon lines of the NV defects exhibit an obvious homogeneous widening mechanism.

Temperature dependence of photoluminescence intensity and spin contrast in nitrogen-vacancy centers

Temperature Dependent Photophysics of Single NV Centers in Diamond

Modeling temperature-dependent population dynamics in the excited state of the nitrogen-vacancy center in diamond

Temperature shift of magnetic-field-dependent photoluminescence features of nitrogen-vacancy ensembles in diamond

Low temperature photo-physics of single NV centers in diamond

Temperature Dependence of Nitrogen-Vacancy Optical Center in Diamond

Temperature Dependent Energy Level Shifts of Nitrogen-Vacancy Centers in Diamond

Resonant versus non-resonant spin readout of a nitrogen-vacancy center in diamond under cryogenic conditions

Resonant Versus Nonresonant Spin Readout of a Nitrogen-Vacancy Center in Diamond under Cryogenic Conditions

Thermal Behaviors of the Sharp Zero–phonon Luminescence Lines of NV Center in Diamond

Spectroscopy of photoionization from the $^1E$ singlet state in nitrogen$-$vacancy centers in diamond

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

Temperature dependent creation of nitrogen-vacancy centers in CVD diamond layers

Nitrogen vacancy luminescence and their phonon sidebands characteristics in nitrogen-doped diamond

Spectral Broadening and Ultrafast Dynamics of a Nitrogen-Vacancy Center Ensemble in Diamond

Charge state dynamics of the nitrogen vacancy center in diamond under 1064 nm laser excitation

Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures

All-optical thermometry and the thermal properties of the optically detected spin resonances of the NV center in nano-diamond

Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars

Temperature-dependent coherence properties of NV ensemble in diamond up to 600 K

Creating diamond color centers for quantum optical applications