Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

Superior performance of multilayered fluoropolymer films in low voltage electrowetting

Evaluating the robustness of top coatings comprising plasma-deposited fluorocarbons in electrowetting systems

Replaceable Dielectric Film for Low-Voltage and High-Performance Electrowetting-Based Digital Microfluidics

Facile Low-Voltage Electrowetting on Dielectrics Using CYTOP™ As Both the Hydrophobic and Insulating Layer

Study of cyanoethyl pullulan as insulator for electrowetting

Enhanced Dielectric Constant and Hydrophobicity of P(VDF–TrFE)-based Composites

Electrowetting-on-dielectric behavior of aqueous droplets and gold nanofluid on an electrospun poly(vinyl chloride) microfiber layer

Evaluation of Cyanoethyl Pullulan material as the dielectric layer for EWOD devices

Biocompatible/Biodegradable Electrowetting On Dielectric Microfluidic Chips With Fluorinated Cta/Plga

Chemical Vapor Deposition of Thin, Conductive, and Fouling-Resistant Polymeric Films

A Novel EWOD Digital Microfluidic Device Using P(VDF-TrFE)

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

EWOD using P(VDF-TrFE)

Enhanced Dielectric and Hydrophobic Properties of Poly(vinylidene fluoride-trifluoroethylene)/TiO2 Nanowire Arrays Composite Film Surface Modified by Electrospinning

Multilayer polyetherimide films incorporating alumina nanolayers for dielectric capacitors

Features of Composite Layers Created Using an Aqueous Suspension of a Fluoropolymer

Combined Effect of Hydroxylated and Fluorinated Acrylate Monomers on Improving the Electro-Optical and Mechanical Performances of PDLC-films

Multilayer heterogeneous dielectric films with simultaneously improved dielectric constant and breakdown strength

Enhancing breakdown strength and lifetime of multilayer dielectric films by using high temperature polycarbonate skin layers

Strengthening Of Electromechanical Properties For Poly(Vinylidene Fluoride-Trifluoroethylene) Films Under Tailored Electric Cycling

Electromechanical deformation and failure of multilayered films