Intrinsic Performance of InAs Nanowire Capacitors

K. Jansson,E. Lind,L. Wernersson
DOI: https://doi.org/10.1109/TED.2013.2293456
IF: 3.1
2014-02-01
IEEE Transactions on Electron Devices
Abstract:The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
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