Abstract:The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS circuits with 500 nm thick Si, operating around 3.8 µm wavelength. Results on facet coupling and sub-wavelength engineered grating coupler solutions in the mid-IR regime will be compared.

Broadband near-field mid-infrared spectroscopy and application to phonon resonances in quartz

Thin‐Film‐Lithium‐Niobate Photonic Chip for Ultra‐Wideband and High‐Precision Microwave Frequency Measurement

Broadband Quantum Spectroscopy at the Fingerprint Mid-Infrared Region

Mid-infrared wide-field nanoscopy

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

Broadband infrared spectroscopy of condensed phases with two intra-pulse difference-frequency-generation frequency combs

Spectral narrowing of a phonon resonance in time-domain sum-frequency spectroscopy

Near-field Raman Spectral Measurement of Monocrystalline Silicon by Apertureless SNOM in Feflection Geometry

Diffraction-limited mid-infrared microspectroscopy to reveal a micron-thick interfacial water layer signature

Terahertz and Microwave Optical Properties of Single-Crystal Quartz and Vitreous Silica and the Behavior of the Boson Peak

Surface and edge resonances of phonon-polaritons in scattering-type near-field optical microscopy

Infrared imaging with nonlinear silicon resonator governed by high-Q quasi-BIC states

Probing Far-Infrared Surface Phonon Polaritons in Semiconductor Nanostructures at Nanoscale

Ultra-broadband quantum infrared spectroscopy

High-Q surface electromagnetic wave resonance excitation in magneto-photonic crystals for super-sensitive detection of weak light absorption in near-IR

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Multi-mW, few-cycle mid-infrared continuum spanning from 500 to 2250 cm-1

Infrared scanning near-field optical microscopy (IR-SNOM) for thermal profiling of quantum cascade lasers

Highly sensitive transient reflection measurement in extreme ultraviolet region for tracking carrier and coherent phonon dynamics

Picocavity-enhanced near-field optical microscopy with 1 nm resolution