Abstract:Specific features in magnetotransport properties due to gradual forming the topological insulator state in sample of single-crystalline n-type Bi2Te2.7Se0.3 during its cooling were analyzed. The electrical resistivity of sample, measured from 2 K to 240 K, corresponds to partially degenerate semiconductor and dominantly depends on T-effect on electron mobility. The moblity is governed by electron-phonon scattering above TC=50K, whereas below TC electron-electron scattering is dominant scattering mechanism. With increasing temperature, electron content linearly increases above TC, whereas below TC electron content is very weakly T-dependent. Transverse magnetoresistance of sample is positive and strongly T-dependent. Two features, which are characteristic for topological insulators, were found in the magnetoresistance. First feature is a crossover from quadratic to linear magnetoresistance, observed within TC < T <240 K range. Crossover field BC decreases with decreasing temperature. Linear magnetoresistace is quantum one that can be due to presence of Dirac fermions, which occupy the lowest Landau level under magnetic field. Second feature is another crossover from combined quadratic-linear to dip-shaped magnetoresistrance, observed at T ≤ TC . Dip-shaped magnetoresistrance is related to weak antilocalization (WAL) phenomenon. The WAL phenomenon and the electron-electron scattering process coexist at the same temperature range. Dip-shaped magnetoresistrance was analysed by in frames of the Hikami-Larkin-Nagaoka model, developed for systems with strong spin-orbit coupling. At cooling below ~ 30 K, the effective dephasing length rapidly increases that is dominantly related to the electron-electron scattering process, too. The parameter α, characterizing the number of conduction channels, contributing to electron transport, is close to 0.5. This value α corresponds to a single topologically non-trivial conduction channel.

Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators

Low-temperature magnetoresistance hysteresis in vanadium-doped Bi2− x Te2.4Se0.6 bulk topological insulators

Temperature evolution of transverse magnetoresistance due to forming the topological insulator state in single-crystalline n-type Bi2Te2.7Se0.3

Ferromagnetism in Vanadium-Doped Bi2se3 Topological Insulator Films

Magnetoresistance and Nonlinear Hall Effect in Quaternary Topological Insulator Bi1.5sb0.5te1.8se1.2

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Anomalous anisotropic magnetoresistance in topological insulator films

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films

Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers

Unusual non saturating Giant Magneto-resistance in single crystalline Bi2Te3 topological insulator

Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4

Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films

Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films

Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Possible Bipolar Effect Inducing Anomalous Transport Behavior in the Magnetic Topological Insulator Mn( Bi1−xSbx)2

Large Magnetoresistance in High Mobility Topological Insulator Bi2Se3

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures