Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering
Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien
DOI: https://doi.org/10.1364/oedi.2019.ow1c.2
2019-01-01
Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).