Gökhan Öztarhan,E. Bulut Kul,Emre Okcu,A. D. Güçlü
Abstract:Semiconductor artificial graphene nanostructures where Hubbard model parameter $U/t$ can be of the order of 100, provide a highly controllable platform to study strongly correlated quantum many-particle phases. We use accurate variational and diffusion Monte Carlo methods to demonstrate a transition from antiferromagnetic to metallic phases for experimentally accessible lattice constant $a=50$ nm in terms of lattice site radius $\rho$, for finite sized artificial honeycomb structures nanopatterned on GaAs quantum wells containing up to 114 electrons. By analysing spin-spin correlation functions for hexagonal flakes with armchair edges and triangular flakes with zigzag edges, we show that edge type, geometry and charge nonuniformity affect the steepness and the crossover $\rho$ value of the phase transition. For triangular structures, the metal-insulator transition is accompanied with a smoother edge polarization transition.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in the semiconductor artificial graphene nanostructures, the transition behavior from antiferromagnetic insulator to metal phase with the change of lattice site radius (\(\rho\)). Specifically, the researchers used the accurate variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC) methods to study the electron correlation effects in artificial graphene nanostructures with different geometries (such as hexagonal armchair edges and triangular zigzag edges).
### Research Background and Problems
1. **Artificial Graphene (AG) Nanostructures**
- AG nanostructures are designed by imitating the two - dimensional honeycomb pattern of real graphene, which can provide a controllable platform to study strongly correlated quantum multi - particle phases.
- Early experiments failed to observe massless Dirac fermions (MDFs) because the lattice period was large. Recent experiments have successfully observed graphene - like behavior by reducing the lattice constant \(a\) to about 50 nm.
2. **Hubbard Model Parameter \(U/t\)**
- In the experimental structure, when the lattice constant \(a = 50 \, \text{nm}\), the Hubbard model parameter \(U/t\) can be as high as 350, much higher than the critical value of the antiferromagnetic Mott transition predicted by the Hubbard model.
- Such a high \(U/t\) value means that the long - range electron - electron interaction has a significant impact on the system, and non - perturbative many - body methods are required to deal with the correlation effects.
3. **Phase Transition Behavior**
- The researchers are concerned with the transition from antiferromagnetic insulator to metal phase as the lattice site radius \(\rho\) changes. In particular, how this transition is affected by geometry, edge type, and charge inhomogeneity.
### Main Research Contents
- **Geometry and Edge Type**
- Nanostructures with hexagonal armchair edges and triangular zigzag edges were studied, and it was found that the edge type and geometry affect the steepness of the phase transition and the critical \(\rho\) value.
- **Charge Inhomogeneity**
- The finite - size effect leads to an inhomogeneous charge distribution within the sample, which makes the phase transition steeper and occurs at a smaller \(\rho\) value.
- **Edge Polarization**
- For the triangular structure, the metal - insulator transition is accompanied by a smooth edge polarization transition, that is, the edge spin polarization gradually increases during the phase transition process.
### Research Methods
- **Variational Monte Carlo (VMC) and Diffusion Monte Carlo (DMC)**
- These methods are used to deal with many - body correlation effects, especially in the fixed - node approximation, to study artificial graphene nanostructures on GaAs substrates.
### Conclusions
- The research shows that at a lattice constant of \(a = 50 \, \text{nm}\), as \(\rho\) increases, the transition from antiferromagnetic insulator to metal phase does occur.
- Factors such as edge type, geometry, size, quantum well shape, and gate potential all affect the characteristics of the phase transition, especially the charge inhomogeneity and edge polarization behavior.
Through this research, the authors revealed the complex phase transition behavior in artificial graphene nanostructures and the underlying physical mechanisms, providing a theoretical basis for further exploration of the properties of these systems in the future.