Abstract:Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore’s law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal–oxide–semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal–oxide–semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal–oxide–semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal–oxide–semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal–oxide–semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

Silicon edge-dot architecture for quantum computing with global control and integrated trimming

Practical design and simulation of silicon-based quantum dot qubits

Chaotic diffusion of particles with finite mass in oscillating convection flows

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

Silicon CMOS architecture for a spin-based quantum computer

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Quantum dots with split enhancement gate tunnel barrier control

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Leveraging Off-the-Shelf Silicon Chips for Quantum Computing

Quantum dot arrays in silicon and germanium

Network architecture for a topological quantum computer in silicon

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Scalable Fault-Tolerant Quantum Technologies with Silicon Colour Centres

Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Qubits made by advanced semiconductor manufacturing

A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling

Scalable on-chip multiplexing of silicon single and double quantum dots

Cryogenic Control Architecture for Large-Scale Quantum Computing