Abstract:We investigate strain-tuned spin transport and optical conductivity in a monolayer (ML) $n$-type ${\mathrm{MoS}}_{2}/\mathrm{EuS}$ heterostructure under linearly polarized terahertz radiation using a low-energy effective Hamiltonian, which takes displacement of the Dirac point induced by strain into account. Through modifying the strain modulus, we find an adjustable relationship between the band edge energy and the strain. Thus the threshold and range of allowed angles are strongly dependent on the strength of strain $\ensuremath{\epsilon}$, whereas the angle $\ensuremath{\theta}$ along which the strain is applied only acts on the former. Due to spin-flipped scattering generated by Rashba spin-orbit coupling, the in-plane spin polarizations (i.e., ${P}_{X}$ and ${P}_{Y}$) can be achieved, and their intensity can be enhanced by increasing $\ensuremath{\epsilon}$. Interestingly, we find that the out-of-plane spin polarization (i.e., ${P}_{Z}$) is related to the synergy of $\ensuremath{\epsilon}$ and the Rashba parameter ${\ensuremath{\lambda}}_{R}$. Especially, ${P}_{Z}$ can approach $100%$ when $\ensuremath{\epsilon}=9%$ and ${\ensuremath{\lambda}}_{R}=2$ meV. Furthermore, the optical transition between the spin-splitting subbands of the conduction band under the strain is studied. It is shown that by varying $\ensuremath{\epsilon}$ we can control the magnitude of both absorption peaks and absorption valleys in optical conductivity. Moreover, the presence of ${\ensuremath{\lambda}}_{R}$ can be used to further enhance the absorption peaks and valleys because ${\ensuremath{\lambda}}_{R}$ can tune the energy difference between the spin-splitting subbands within a specific valley and thus affect the optical transition channels. Our findings demonstrate that the strain can influence the tunneling behavior and valley Hall conductivity in a ML $n$-type ${\mathrm{MoS}}_{2}/\mathrm{EuS}$ heterostructure, and these features are applicable to other two-dimensional ML transition metal dichalcogenides, which is promising for terahertz and valleytronic devices.

Exciton fine structure splitting and linearly polarized emission in strained transition-metal dichalcogenide monolayers

Fermi polaron fine structure in strained van der Waals heterostructures

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Strain-dependent exciton diffusion in transition metal dichalcogenides

Impact of strain on the optical fingerprint of monolayer transition metal dichalcogenides

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Signatures of valley drift in the diversified band dispersions of bright, gray, and dark excitons in MoS2 monolayers under uni-axial strains

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Biaxial strain tuning of exciton energy and polarization in monolayer WS2

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

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Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing

Strain-tuned spin polarization and optical conductivity in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>EuS</mml:mi></mml:math> heterostructures

Strain-tuned spin polarization and optical conductivity in MoS2/EuS heterostructures

Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Biaxial strain in atomically thin transition metal dichalcogenides

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Theory of strain in single-layer transition metal dichalcogenides

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.