Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot

Daniel N. Shanks,Fateme Mahdikhanysarvejahany,Michael R. Koehler,David G. Mandrus,Takashi Taniguchi,Kenji Watanabe,Brian J. LeRoy,John R. Schaibley

DOI: https://doi.org/10.1103/PhysRevB.106.L201401

2022-11-03

Abstract:Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve the capture of a single exciton in a two - dimensional semiconductor quantum dot (QD), especially for valleytronics applications. Specifically, the authors study the behavior of interlayer excitons (IXs) in 2D semiconductor quantum dots defined by an electric field and attempt to observe and verify the capture of a single IX.

### Problem Background

1. **Characteristics of Interlayer Excitons (IXs)**
- IXs exist in heterostructures composed of different transition metal dichalcogenide (TMD) layers, such as WSe₂ - MoSe₂.
- These IXs have a long lifetime (> 1 ns), and their spin - valley coupling characteristics make them ideal candidates for valleytronics applications.

2. **Existing Challenges**
- Previous experiments have observed the phenomenon that multiple IXs occupy the same trap, but the capture of a single IX has not been successfully resolved yet.
- A controllable and tunable method is required to capture and study a single IX.

### Solution

The authors adopt a novel method, that is, using a nanopatterned graphene gate to create an IX trap defined by an electric field. The main advantages of this method include:

- **Definite Position**: The position of the trap can be precisely controlled by lithography technology.
- **High Tunability**: By applying different gate voltages, the energy of IX can be adjusted in a range up to 100 meV.

### Experimental Results

1. **Energy Blue - shift Phenomenon**
- An IX energy blue - shift phenomenon related to power has been observed, in which the narrow - linewidth emission shows discrete energy jumps.
- These jumps are attributed to the quantized increase in the number of IXs in the trap.

2. **Evidence of Single IX Capture**
- By comparing the theoretical model and experimental data, the lowest - energy emission line is assigned to the recombination of a single IX.
- At high excitation power, discrete energy transitions between multi - IX states are observed, which further confirms the existence of a single IX.

3. **Verification of Theoretical Model**
- The dipole - dipole interaction between IXs is simulated using the Bilayer Keldysh potential model, and the calculated results are consistent with the experimental observations.

### Potential Applications

This electric - field - defined IX quantum dot provides a basis for future research, such as:

- **Valleytronics**: Use the spin - valley coupling characteristics of IX for information encoding.
- **Single - Photon Emitter**: Serve as a quantum light source or a quantum spin - photon interface.

In conclusion, this paper successfully achieves the capture of a single IX through an electric - field - defined 2D semiconductor quantum dot and lays the foundation for further exploration of the properties of IX and its applications in valleytronics.