Abstract:Conceptual 2D group III nitrides and oxides (e.g., 2D InN and 2D InO) in heterostructures with graphene have been realized by metalorganic chemical vapor deposition (MOCVD). MOCVD is credited with being central to fabrication of established semiconductor materials and by purpose for an advance in emergent semiconductor materials at the 2D limit. A defining characteristic of MOCVD is the employment of metalorganic precursors such as trimethyl-indium, -gallium, and -aluminum, which contain (strong) metal-carbon bonds. Mechanisms that regulate MOCVD processes at the atomic scale are largely unknown. Here, we employ density-functional molecular dynamics -- accounting for van der Waals interactions -- to locate reaction pathways responsible for dissociation of trimethylindium (TMIn) precursor in the gas phase as well as on top-layer and zero-layer graphene. The simulations reveal how collisions with hydrogen molecules, intramolecular or surface-mediated proton transfer, and direct TMIn/graphene reactions assist TMIn transformations, which ultimately enables delivery of In monomers, or InH and CH3In admolecules, on graphene. Results presented also show how TMIn/H2 reactions on graphene, or in the gas phase, lead to formation of methane, ethane, propane, ethene hydrocarbons, and atomic hydrogen. This work provides knowledge for understanding thin-film nucleation and intercalation mechanisms at the atomic scale and for overcoming challenges in integration of 2D materials and graphene heterostructures in technology.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the atomic - level reaction paths and mechanisms of trimethylindium (TMIn) precursors on the graphene surface during the metal - organic chemical vapor deposition (MOCVD) process. Specifically, the author hopes to reveal the reaction paths of TMIn precursor dissociation in the gas phase and on the graphene surface through density - functional molecular dynamics simulations (considering van der Waals interactions), thereby providing a detailed atomic - scale understanding of the process of providing indium atoms or indium - containing adsorbed molecules to the graphene surface. ### Main problems and research background 1. **Key challenges in the MOCVD process**: - MOCVD is a widely used technique for preparing thin films of semiconductor materials and heterostructures, especially suitable for two - dimensional materials such as nitrides and oxides. - Although the MOCVD technology is already very mature, the specific mechanisms for regulating the MOCVD process at the atomic scale are still unclear, especially when using metal - organic precursors (such as trimethylindium, trimethylgallium, trimethylaluminum, etc.). 2. **Research objectives**: - Reveal the specific paths of TMIn precursor dissociation in the gas phase and on the graphene surface. - Understand the influence of hydrogen molecules on TMIn dissociation. - Explore how to effectively transport indium atoms or indium - containing molecules to the graphene surface through these reaction paths, and then realize the controllable growth of two - dimensional materials. ### Specific research content - **Simulation method**: Density - functional theory (DFT) combined with molecular dynamics (MD) simulations are used, considering van der Waals interactions, to simulate the interactions between TMIn, hydrogen molecules and the graphene surface. - **Reaction paths**: Through simulations, multiple possible reaction paths have been discovered, including hydrogen molecule collisions, surface - mediated proton transfer, direct TMIn/graphene reactions, etc. - **Product analysis**: Simulation results show that the reactions between TMIn, hydrogen molecules and the graphene surface can generate multiple products, such as methane, ethane, propane, ethylene and other hydrocarbons, as well as indium single atoms, indium hydrides (InH) and indium - containing adsorbed molecules (such as CH3In). ### Significance and applications This research not only provides important atomic - scale insights into the reaction mechanisms of metal - organic precursors in the MOCVD process, but also lays the foundation for the future development of more efficient two - dimensional material growth technologies. In particular, this research is of great significance for the growth of two - dimensional nitrides and oxides on the graphene/SiC interface. ### Summary The main purpose of the paper is to reveal the dissociation mechanism of TMIn precursors in the MOCVD process through simulations, especially their specific reaction paths in the gas phase and on the graphene surface. This helps to understand how to effectively control the supply of metal atoms, thereby promoting the integration and technological applications of two - dimensional materials and graphene heterostructures.

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