Evolution of domain structure with electron doping in ferroelectric thin films

W. A. Atkinson

DOI: https://doi.org/10.1103/PhysRevB.106.134102

2022-06-21

Abstract:To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale ``Kittel'' domains of opposite polarization that are separated by uncharged 180$^\circ$ domain walls. Here, I report on self-consistent solutions of coupled Landau-Ginzburg-Devonshire and Schrödinger equations for an electron-doped ferroelectric thin film. The model is based on LaAlO$_3$/SrTiO$_3$ interfaces in which the SrTiO$_3$ substrate is made ferroelectric by cation substitution or strain. I find that electron doping destabilizes the Kittel domains. As the two-dimensional electron density $n_\mathrm{2D}$ increases, there is a smooth crossover to a zigzag domain wall configuration. The domain wall is positively charged, but is compensated by the electron gas, which attaches itself to the domain wall and screens depolarizing fields. The domain wall approaches a flat head-to-head configuration in the limit of perfect screening. The polarization profile may be manipulated by an external bias voltage and the electron gas may be switched between surfaces of the ferroelectric film.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The core problem that this paper attempts to solve is to understand the influence of electron doping on the evolution of the domain structure of ferroelectric thin films. Specifically, the author studied numerically how electron doping changes the traditional Kittel domain structure and explored the morphology of domain walls under different electron density conditions and their influence on polarization and free - electron distribution.

### Research Background and Problem Description

1. **Kittel Domain Structure**: Undoped insulating ferroelectric thin films usually spontaneously form nanoscale Kittel domain structures in order to minimize electrostatic energy. These domains have opposite polarization directions and are separated by uncharged 180° domain walls.

2. **Effect of Electron Doping**: When electron doping is introduced, these Kittel domain structures become unstable. As the two - dimensional electron density \( n_{2D} \) increases, the domain walls gradually change from the Kittel domain structure to a zigzag configuration. This transformation is accompanied by the appearance of positively - charged domain walls, and these positive charges are partially screened by the electron gas.

3. **Key Problems**:
- Why can polarization be switched at the LaAlO₃/SrTiO₃ interface?
- How do doped electrons affect the domain structure and polarization distribution?
- What are the specific morphologies of domain walls under different electron densities?

### Research Methods and Models

The author used the self - consistent solutions of the Landau - Ginzburg - Devonshire (LGD) equation and the Schrödinger equation to simulate electron - doped ferroelectric thin films. By solving these equations, the author was able to study the interactions among polarization, free - electron density, and electrostatic potential. Key formulas include:

- **LGD Energy**:
\[
F_p=\int_0^{L_x} dx\int_0^{L_z} dz\left[a_1 P_x^2 + a_3 P_z^2 + a_{11}(P_x^4 + P_z^4)+a_{12} P_x^2 P_z^2+\frac{g_{11}}{2}|\nabla\cdot P|^2+\frac{g_{44}}{2}\left(\left(\frac{\partial P_z}{\partial x}\right)^2+\left(\frac{\partial P_x}{\partial z}\right)^2\right)\right]
\]

- **Electron Free Energy**:
\[
F_e=-k_B T\ln\left[\text{Tr}\left(e^{-\beta(\hat{H}-\mu\hat{N})}\right)\right]+\mu N + e\int d\mathbf{r}\rho_f(\mathbf{r})\phi(\mathbf{r})
\]

- **Gauss Law**:
\[
-\epsilon_0\nabla^2\phi(\mathbf{r})=\rho_f(\mathbf{r})+\rho_b(\mathbf{r})
\]

### Main Findings

1. **Evolution of Domain Structure**: As \( n_{2D} \) increases, the domain walls gradually change from the Kittel domain structure to a zigzag structure. At high electron densities, the domain walls finally approach a flat head - to - head configuration.

2. **Coupling between Polarization and Electron Gas**: The electron gas tends to attach to the domain walls and partially screen the depolarization field. This makes the domain walls positively charged, and the electron gas compensates for these positive charges.

3. **Effect of Applied Voltage**: By applying a bias voltage, the polarization distribution can be manipulated, causing the electron gas to switch between different surfaces of the ferroelectric thin film.

### Conclusion

This study reveals the profound influence of electron doping on the domain structure of ferroelectric thin films, especially the changes in the morphology of domain walls under different electron densities. These results not only help to understand the physical mechanisms at the LaAlO₃/SrTiO₃ interface but also provide a theoretical basis for the design and optimization of new ferroelectric devices.