Abstract:Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe$_2$) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly doping-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe$_2$ via copper, lithium, and electrostatic doping. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation.

What problem does this paper attempt to address?

The paper primarily explores the application of hydrogen (H) doping technology driven by ionic liquid gating in 1T-TiSe₂ (titanium selenide) to achieve superconductivity. Specifically, the research team demonstrates how this method can non-volatilely control the charge density wave (CDW) and superconducting phase in 1T-TiSe₂ material. Here are the key issues the paper attempts to address: 1. **Exploring the impact of hydrogen doping on superconductivity**: The researchers investigate whether inserting hydrogen atoms into the interlayer gaps of 1T-TiSe₂ through ionic liquid gating technology at room temperature and ambient pressure can induce superconductivity and the characteristics of such superconductivity. 2. **Understanding the mechanism of hydrogen doping**: The paper discusses in detail how hydrogen doping changes the electronic structure of 1T-TiSe₂, thereby affecting its superconductivity and charge density wave properties. In particular, the authors focus on how high concentrations of hydrogen doping reconstruct the band structure and analyze the coupling strength between electrons and hydrogen phonons. 3. **Developing new superconducting materials**: Through experimental results and first-principles calculations, the paper proposes a method to design new transition metal dichalcogenides (TMDs) and other layered materials with potential superconducting properties using gating-controlled hydrogen doping technology. In short, the goal of this study is to reveal how hydrogen doping affects the physical properties of specific layered materials and to explore the possibility of developing new superconducting materials using this technology. The research results are significant for understanding the mechanism of superconductivity under low pressure and for finding superconducting materials at room temperature.

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