Abstract:Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits, conventional surface techniques like infrared thermometry are unable to measure 3D temperature distribution and optical and magnetic resonance techniques are difficult to apply due to the presence of metals and large current densities. X-rays offer high penetration depth and can be used to probe 3D structures. We report a method utilizing the temperature dependence of x-rays diffraction intensity via the Debye-Waller factor to simultaneously map the temperature of an individual silicon die that is a part of a stack of dies. Utilizing beamline 1-ID-E at the Advanced Photon Source (Argonne), we demonstrate for each individual silicon die, a temperature resolution of 3 K, a spatial resolution of 100 um x 400 um and a temporal resolution of 20 s. Utilizing a sufficiently high intensity laboratory source, e.g., from a liquid anode source, this method can be scaled down to laboratories for non-invasive temperature mapping of 3D integrated circuits.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: on 3D integrated circuits, traditional surface temperature measurement techniques (such as infrared thermal imaging) cannot effectively measure the three - dimensional temperature distribution of internal silicon wafers. Especially in the presence of metals and high current densities, optical and magnetic resonance techniques are also difficult to apply. Therefore, researchers need a non - invasive technique that can penetrate multi - layer structures to accurately measure temperature hotspots in these circuits. Specifically, as the power density of integrated circuits increases, thermal hotspots become more common in integrated circuits. Tracking these thermal hotspots is crucial for preventing circuit failures. However, in 3D integrated circuits, traditional surface techniques such as infrared thermal imaging cannot measure 3D temperature distributions, and due to the presence of metals and large current densities, optical and magnetic resonance techniques are also difficult to apply. X - rays have a relatively high penetration depth and can be used to detect 3D structures. Therefore, this paper proposes a method that utilizes the change in X - ray diffraction intensity with temperature, through the Debye - Waller factor, to simultaneously map the temperature of each individual silicon wafer in a stacked silicon wafer. ### Main problem summary: 1. **Temperature hotspot monitoring in 3D integrated circuits**: Traditional methods such as infrared thermal imaging cannot effectively measure the temperature distribution inside 3D structures. 2. **The influence of high current density and metals on measurement**: Optical and magnetic resonance techniques are difficult to apply due to the presence of metals and high current densities. 3. **The need for non - invasive temperature measurement**: A technique that can measure 3D temperature distribution without damaging the sample is required. To solve these problems, this paper proposes a method based on the relationship between X - ray diffraction intensity and temperature, using the change in the Debye - Waller factor to achieve temperature mapping of each individual silicon wafer in a stacked silicon wafer. This method can be implemented using a high - energy X - ray source in a laboratory environment, with a relatively high temperature resolution (3 K), spatial resolution (100 µm x 400 µm) and time resolution (20 seconds).

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