Abstract:Van der Waals (vdWs) heterostructures based on 2D metals and semiconductors have attracted considerable attention due to their excellent properties and great application potential in next‐generation electronic and optoelectronic devices. To obtain such vdWs heterostructures, the conventional approach with artificial exfoliation and stacking of 2D metals onto 2D semiconductors in the vertical direction is still far from satisfactory, because of the low yield and impurity‐involved transfer process. Here, two‐step vapor deposition growth of 2D TaSe2‐MoSe2 metal–semiconductor heterostructures is reported. Raman maps confirm the precise spatial modulation of the as‐grown 2D TaSe2‐MoSe2 heterostructures. Structural analysis reveals that the upper 1T‐TaSe2 is formed heteroepitaxially on/around the presynthesized 2H‐MoSe2 monolayers with an epitaxial relationship of (10‐10)TaSe2//(10‐10)MoSe2 and [0001]TaSe2//[0001]MoSe2. Based on the detailed characterizations of morphology, structure, and composition, an edge‐induced growth mechanism is proposed to illustrate the formation process of the 2D heterostructures, confirmed by first‐principle calculations. In addition, Kelvin probe force microscope characterizations and electrical transport measurements confirm that the 2D metal–semiconductor heterostructures exhibit typical rectification characteristics with a contact potential height of ≈431 mV. The direct growth of high‐quality 2D metal–semiconductor heterostructures marks an important step toward high‐performance integrated optoelectronic devices. 2D TaSe2‐MoSe2 metal–semiconductor heterostructures are successfully achieved usin an edge‐induced epitaxial growth mode. The unique contact potential and strong current rectification behavior will facilitate the development high‐performance transition metal dichalcogenide‐based electronic devices.

Epitaxy of NiTe 2 on WS 2 for the p-Type Schottky Contact and Increased Photoresponse

Molecular beam epitaxy growth and doping modulation of topological semimetal NiTe2

Molecular Beam Epitaxy Growth and Doping Modulation of Topological Semimetal NiTe$_2$

Two-Dimensional Metallic NiTe2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity.

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Bulk Dirac cone and highly anisotropic electronic structure of Ni Te 2

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS2 van der Waals Epitaxial Heterostructures

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Edge‐Assisted Epitaxy of 2D TaSe 2 ‐MoSe 2 Metal‐Semiconductor Heterostructures and Application to Schottky Diodes

Epitaxial Growth and Atomic-Scale Study of Type-Ii Dirac Semimetal 1T-Nite2 Film

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe 2 as high performance contacts for WSe 2 transistors

Epitaxy of wafer-scale bilayer MoS2 thin film for P-N diodes

Two-step chemical vapor deposition synthesis of NiTe 2 -MoS 2 vertical junctions with improved MoS 2 transistor performance

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.