Abstract:Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

Spin anomalous-Hall unidirectional magnetoresistance

Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers

Anomalous Hall Magnetoresistance in a Ferromagnet.

Spin Hall-induced bilinear magnetoelectric resistance

Physics Origin of Universal Unusual Magnetoresistance

Quantum unidirectional magnetoresistance

Unusual Anisotropic Magnetoresistance Due to Magnetization-Dependent Spin-Orbit Interactions

Magnonic Unidirectional Spin Hall Magnetoresistance in a Heavy-Metal–Ferromagnetic-Insulator Bilayer

Effect of Spin Fluctuations on Magnetoresistance and Anomalous Hall Effect in the Chiral Magnet Co8Zn8Mn4

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Topologically protected magnetoresistance by quantum anomalous Hall effect

Anomalous Spin–orbit Torques in Magnetic Single-Layer Films

Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Coexistence of Spin-Orbit Torque and Unidirectional Magnetoresistance Effect Induced by Spin Polarization with Spin Rotation Symmetry in Co/Cu/Co Structures

Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers

Magnetoresistance originated from charge-spin conversion in ferromagnet

Unusual magneto-transport induced by anomalous Hall effect

On the angular dependence of anomalous Hall current

Magnetotransport induced by anomalous Hall effect

Sign reversal of unidirectional magnetoresistance in monocrystalline Fe/Pt bilayers

Anomalous Hall effect sensitive to magnetic monopoles and skyrmion helicity in spin-orbit coupled systems