Spin anomalous-Hall unidirectional magnetoresistance

M. Mehraeen,Steven S.-L. Zhang

DOI: https://doi.org/10.1103/PhysRevB.105.184423

2022-05-25

Abstract:We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in the ferromagnetic layer, which, in turn, modulates the resistance of the bilayer when the direction of the applied current or the magnetization is reversed. The dependences of the spin AH-UMR effect on materials and geometric parameters are analyzed and compared with other nonlinear magnetoresistances. In particular, we show that, in magnetic bilayers where spin anomalous Hall and spin Hall effects are comparable, the overall UMR may undergo a sign change when the thickness of either layer is varied, suggesting a scheme to quantify the spin Hall or spin anomalous Hall angle via a nonlinear transport measurement.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to predict a new unidirectional magnetoresistance effect (UMR), namely spin - anomalous - Hall unidirectional magnetoresistance (AH - UMR), in a conductive bilayer structure composed of a ferromagnetic layer and a non - magnetic layer. This effect is different from the known unidirectional spin - Hall magnetoresistance (USMR) which depends on the spin - Hall effect in the normal - metal layer, but originates from the spin - anomalous - Hall effect in the ferromagnetic layer.

Specifically, the research aims to:

1. **Reveal a new mechanism**: Generate a net non - equilibrium spin density through charge - spin conversion in the ferromagnetic layer by the spin - anomalous - Hall effect and combined with structural inversion asymmetry, thereby modulating the resistance of the bilayer structure. When the direction of the applied current or magnetization is reversed, this modulation will lead to a change in resistance.

2. **Analyze the dependence relationship**: Study the dependence relationship between the AH - UMR effect and material parameters (such as the spin - Hall angle, spin - anomalous - Hall angle) and geometric parameters (such as the thickness of each layer), and compare it with other nonlinear magnetoresistances.

3. **Propose an experimental scheme**: In particular, in the ferromagnetic bilayer structure, when the spin - anomalous - Hall effect and the spin - Hall effect are comparable, by changing the thickness of either layer, the overall UMR may change sign. This provides a scheme for quantifying the spin - Hall angle or the spin - anomalous - Hall angle through nonlinear transport measurements.

In summary, the core problem of this paper is to explore and understand the novel unidirectional magnetoresistance phenomenon driven by the spin - anomalous - Hall effect in the ferromagnetic/non - magnetic bilayer structure and its potential application value.