Abstract:Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.

Kramers' escape problem for white noise driven switching in ferroelectrics

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Kramers’ Escape Rate Problem Within a Non-Markovian Description

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

Structures and velocities of noisy ferroelectric domain walls

Monte-Carlo Based Simulation Method for Ferroelectric Memory Devices Including Polarization Switching and Trap Behaviors

Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing

Polarization Switching in Nanoscale Ferroelectrics

Ferroelectric Fractals: Switching Mechanism of Wurtzite AlN

Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures

A Monte-Carlo approach of domain switching in ferroelectric Potts lattice under external electric field

Frustrated ferroelectricity from interlocked topological defects

Monte Carlo simulation of ferroelectric polarization switching

Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

FerroCoin: Ferroelectric Tunnel Junction-Based True Random Number Generator

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Antiferroelectric Polarization Switching and Dynamic Scaling of Energy Storage: A Monte Carlo Simulation

Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing