Abstract:Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3]

Electric-field-driven conductance switching in encapsulated graphene nanogaps

Ion Density-Dependent Dynamic Conductance Switching in Biomimetic Graphene Nanopores.

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Electric-Field Control of Giant On/Off Current Ratio in Graphene Through Reversible Hydrogenation

Conductance Switching and Mechanisms in Single‐Molecule Junctions

Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Electric field-controlled rippling of graphene

Contactless Spin Switch Sensing by Chemo-Electric Gating of Graphene.

Electrochemical gating for single-molecule electronics with hybrid Au|graphene contacts

Molecular Dynamics Analysis of Graphene-Based Nanoelectromechanical Switch

Rectification by hydrodynamic flow in an encapsulated graphene Tesla valve

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

Single-molecule field effect and conductance switching driven by electric field and proton transfer

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Quantum Goos-Hänchen Switch in Graphene Junctions

Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field

Electric imaging and dynamics of photo-charged graphene edge