Abstract:Perovskite nitrides are starting to be explored for their promising properties distinct from their oxide counterparts. Here, through first-principles density functional computations, we study the intricate relationship between ferroelectricity and metallicity in the ferroelectric nitride LaWN$_3$. We systematically assess the impact of electron and hole doping via the background charge method, revealing that both types of charge carriers diminish the propensity for ferroelectricity in LaWN$_3$, although to remarkably different extents. Specifically, the introduction of electrons leads to centrosymmetry at a lower concentration value of nearly 0.2 electrons per formula unit. In contrast, the addition of holes does not result in centrosymmetry at reasonable doping values of up to 0.3 holes per formula unit. We present the underlying mechanisms behind these findings, noting that adding electrons fills the valence orbitals of both W and N atoms. This filling leads to a screening effect on the long-range repulsion between these atoms, thereby reducing the off-centering of W. On the other hand, hole doping does not significantly alter the W-N bonding nature, resulting in a more robust off-centering. Furthermore, we introduce explicit impurity atoms and analyze the influence of the different factors contributing to the change in polarization, namely, the size of the dopant, charge carriers introduced by the dopant, and changes in lattice constants. We discover that doped LaWN$_3$ can be a promising polar metal, especially with acceptor dopants. Our study comprehensively shows the interplay between polarity and metallicity in this prototypical perovskite nitride.

Semiconducting character of LaN: magnitude of the band gap, and origin of the electrical conductivity

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Ultralow lattice thermal conductivity, negative thermal expansion, elastic and thermoelectric properties of Lanthanum Nitride: Insights from first-principle calculations

A First-Principle Calculation and de Haas-van Alphen Effect Simulation in Superconductor LaNiC 2

Electronic structures and topological properties in nickelates Ln n +1Ni n O2 n +2

Electronic structures and topological properties in nickelates $Ln_{n+1}$Ni$_n$O$_{2n+2}$

Electronic structures of filled tetrahedral semiconductors LiMgN and LiZnN: conduction band distortion

Nitrogenated Amorphous Carbon As a Semiconductor

Electronic structure and superconducting properties of LaNiO$_2$

Assessing the Electronic and Optical Properties of Lanathanum Diselenide: a computational study

Novel nitrogen-rich Lanthanum nitrides induced by the ligand effect under pressure

Pressure-induced Ferroelectric and Anti-Ferroelectric Phase Transitions in LaN

Charge transfer and metallicity in LaNiO$_3$/LaMnO$_3$ superlattices

Dopant-induced modulation of ferroelectricity in perovskite nitride LaWN$_3$

LaN structural and topological transitions driven by temperature and pressure

DFT insights of structural, electronic, magnetic, and optical characteristics of transition metals doped La0.75TM0.25N (TM = Mn, Fe, Co) compounds for spintronics applications

Magnetic and electronic properties of nitrogen-doped lanthanum sesquioxide La2O3 as predicted from first principles

Structural, Elastic and Thermal Properties of the Compound LaNi4.5Sn0.5

Predicting the Lattice Thermal Conductivity in Nitride Perovskite LaWN3 from Ab Initio Lattice Dynamics

Electronic Structure and Fermiology of Superconducting LaNiGa$_2$

Band structure parameters of the nitrides: The origin of the small band gap of InN