Regulate the Direct-Indirect Electronic Band Gap Transition by Electron-Phonon Interaction in BaSnO3
Binru Zhao,Qing Huang,Jiangtao Wu,Jinlong Jiao,Mingfang Shu,Gaoting Lin,Qiyang Sun,Ranran Zhang,Masato Hagihala,Shuki Torri,Guohua Wang,Qingyong Ren,Chen Li,Zhe Qu,Haidong Zhou,Jie Ma
DOI: https://doi.org/10.48550/arxiv.2111.11180
2021-01-01
Abstract:The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.