Near-infrared Schottky silicon photodetectors based on two dimensional materials

Teresa Crisci,Luigi Moretti,Mariano Gioffre',Maurizio Casalino
DOI: https://doi.org/10.48550/arXiv.2105.00838
2021-04-22
Abstract:Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.
Applied Physics,Optics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the performance of silicon - based Schottky photodetectors in the near - infrared (NIR) band. Specifically, the paper explores how to use Schottky junctions formed by two - dimensional materials (such as graphene and other transition metal dichalcogenides, TMDCs) and silicon to achieve this goal. The performance of traditional metal - based Schottky silicon photodetectors in the near - infrared band is limited, especially when operating at room temperature, due to problems such as low photoemission efficiency and high dark current. By introducing two - dimensional materials, the paper aims to overcome these limitations and develop new photodetectors with higher responsivity, lower dark current, and a wider operating wavelength range. The paper first expounds on the physical effects and working principles of such devices, then describes the main structures reported in the literature, and discusses the most remarkable achievements in recent years. In particular, the paper emphasizes the role of the internal photoemission effect (IPE) in these devices and how to enhance this effect by optimizing the properties of two - dimensional materials and the device structure, thereby improving the performance of photodetectors.