Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit
Yuancai Gong,Ruichan Qiu,Chuanyou Niu,Junjie Fu,Erin Jedlicka,Rajiv Giridharagopal,Qiang Zhu,Yage Zhou,Weibo Yan,Shaotang Yu,Jingjing Jiang,Sixin Wu,David S. Ginger,Wei Huang,Hao Xin
DOI: https://doi.org/10.1002/adfm.202101927
IF: 19
2021-04-15
Advanced Functional Materials
Abstract:<p>The large open-circuit voltage deficit (<i>V</i><sub>oc,def</sub>) is the key issue that limits kesterite (Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub>, [CZTSSe]) solar cell performance. Substitution of Cu<sup>+</sup> by larger ionic Ag<sup>+</sup> ((Ag,Cu)<sub>2</sub>ZnSn(S,Se)<sub>4</sub>, [ACZTSSe]) is one strategy to reduce Cu–Zn disorder and improve kesterite <i>V</i><sub>oc</sub>. However, the so far reported ACZTSSe solar cell has not demonstrated lower <i>V</i><sub>oc,def</sub> than the world record device, indicating that some intrinsic defect properties cannot be mitigated using current approaches. Here, incorporation of Ag into kesterite through a dimethyl sulfoxide (DMSO) solution that can facilitate direct phase transformation grain growth and produce a uniform and less defective kesterite absorber is reported. The same coordination chemistry of Ag<sup>+</sup> and Cu<sup>+</sup> in the DMSO solution results in the same reaction path of ACZTSSe to CZTSSe, resulting in significant suppression of Cu<sub>Zn</sub> defects, its defect cluster [2Cu<sub>Zn</sub> + Sn<sub>Zn</sub>], and deep level defect Cu<sub>Sn</sub>. A champion device with an efficiency of 12.5% (active area efficiency 13.5% without antireflection coating) and a record low <i>V</i><sub>oc,def</sub> (64.2% Shockley–Queisser limit) is achieved from ACZTSSe with 5% Ag content.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology