Abstract:Ferroelectricity is in demand in many device concepts in electronics, energy and microsystem engineering. The performance of ferroelectrics-based devices is determined by either out-of-plane or in-plane polarization, or out-of-plane or in-plane piezoelectric strain. Real prospects for the practical implementation of innovative devices opened up after the discovery of ferroelectricity in ultrathin hafnium oxide films, due to their perfect compatibility with silicon technology. Ferroelectric properties of this material have been assigned to an orthorhombic structural phase with a single polar axis, but the spatial orientation of the polarization vector and the tensorial piezoelectric behaviour, which are inextricably coupled, still remain unknown. Herein, the rotation of the polarization vector in a Hf0.5Zr0.5O2 (10 nm) capacitor during polarization switching and the spatial distribution of longitudinal and shear piezoelectric coefficients are elucidated at the nanoscale using operando vector piezoresponse force microscopy. In most of the capacitor, a 180°-flipping of the polarization vector is observed, which is consistent with the orthorhombic phase structure. However, a rather large fraction of the capacitor is also occupied by nanoregions of ferroelastic (non-180°) switching, which is explained by the effect of the local mechanical stress. To quantify the three-dimensional piezoresponse, a novel approach exploiting the Poisson effect in artificially created non-ferroelectric regions is proposed and it shows that the shear piezoelectric coefficient is twice the longitudinal coefficient. The experimental insights entail an important step in fundamental understanding of the ferroelectric and piezoelectric properties of hafnium oxide and have great potential to trigger new versions of ferroelectric-based devices.

Mapping Ferroelectric Fields Reveals the Origins of the Coercivity Distribution

Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/oxide Interfaces by Z-contrast Imaging.

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

Direct observation of charge density and electronic polarization in fluorite ferroelectrics by 4D-STEM

Visualizing Ferroelectric Uniformity of Hf1- xZr x O2 Films Using X-ray Mapping

Polarization description of successive ferroelectric switching in hafnia

Imaging ferroelectric domains via charge gradient microscopy enhanced by principal component analysis

Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Ferroelectric domain nucleation and switching pathways in hafnium oxide

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Ferroelectric hafnia as an ionic conductor

Diffraction contrast of ferroelectric domains in DPC STEM images

From Swiss-cheese to discrete ferroelectric composites: Assessing the ferroelectric butterfly shape in polarization loops

Polarization-modulated rectification at ferroelectric surfaces

Probing electric field control of magnetism using ferromagnetic resonance

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights