Chemical composition control at the substrate interface as the key for FeSe thin film growth

Yukiko Obata,Michiko Sato,Yuji Kondo,Yuta Yamaguchi,Igor Karateev,Alexander Vasiliev,Silvia Haindl

DOI: https://doi.org/10.1021/acsami.1c14451

2020-12-15

Abstract:The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition which determine FeSe thin film growth and focuses on the film/substrate interface, the tendency for domain matching epitaxial growth but also the disadvantage of chemical heterogeneity. We propose that homogenization of the substrate surface improves the control of stoichiometry, texture, and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. The controlled interface in FeSe/Fe/MgO demonstrates the proof-of-principle.

Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to improve the quality of FeSe thin films, especially the superconducting properties, by controlling the chemical composition of the substrate interface during the growth process of FeSe thin films. Specifically, the researchers focused on the application of pulsed - laser deposition (PLD) technology in the growth of FeSe thin films and explored the influence of substrate selection on the structure and chemical composition of the films, especially the formation of the interface layer or chemical diffusion phenomenon between the substrate and the films. The main goal of the paper is to better control the stoichiometry, texture and nano - strain of the films by improving the uniformity of the substrate surface, so as to promote superconductivity, even in ultra - thin FeSe thin films.

In the study, the interface problem between FeSe thin films and MgO substrates was particularly emphasized, and how this interface affects the crystal orientation and superconducting transition temperature of the films. By introducing an Fe buffer layer, the researchers proposed a method to improve the FeSe/MgO hetero - interface, which can stabilize the cube - on - cube epitaxial growth and may optimize the superconducting ground state by adjusting the unit cell structure. These findings are of great significance for understanding the growth mechanism of FeSe thin films and their superconducting properties, and provide conceptual guidance for the selection of other substrates.