Abstract:Few-layer selenium and tellurium films have been recently prepared, and they provide a new platform to explore novel properties of two-dimensional (2D) elemental materials. In this work, we have performed a systematic first-principles study on the electronic, linear, and nonlinear optical (NLO) properties of atomically thin selenium and tellurium films within the density-functional theory with the generalized gradient approximation plus scissors correction using the band gaps from the relativistic hybrid Heyd-Scuseria-Ernzerhof functional calculations. Interestingly, we find that few-layer Se and Te possess large second-harmonic generation (SHG), linear electro-optic effect, and bulk photovoltaic effect. In particular, trilayer (TL) Te possesses large SHG coefficient, being more than 65 times larger than that of GaN, a widely used NLO material. Bilayer (BL) Te has huge static SHG coefficient, being more than 100 times larger than that of GaN. Furthermore, monolayer (ML) Se possesses large SHG coefficient. Moreover, we predict that TL Te exhibits strong bulk photovoltaic effect (BPVE), being greater than that of GeS, a polar system with the largest BPVE found so far. Although the shift current conductivities of bulk and 2D Se are comparable, the shift current conductivities of TL Te are five times larger than those of bulk Te. Finally, an analysis of the calculated electronic band structures indicates that the strong NLO responses of 2D Se and Te materials are primarily derived from their low-dimensional structures with high anisotropy, directional covalent bonding, lone-pair electrons, and relatively small band gaps. These findings provide a practical strategy to search for excellent NLO and BPVE materials.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the potential of two - dimensional thin - film materials of selenium (Se) and tellurium (Te) in terms of nonlinear optical properties, especially their performance in second - harmonic generation (SHG), linear electro - optic effect (LEO) and bulk photovoltaic effect (BPVE). Through first - principles calculations, the authors systematically studied the electronic structures, linear and nonlinear optical properties of these materials, aiming to discover new materials with excellent nonlinear optical responses, which may have important applications in fields such as optoelectronic switches, optical signal modulators, frequency conversion, solar cells, photodetectors, etc. Specifically, the paper focuses on the following aspects:
1. **Electronic structure**: Through density - functional - theory (DFT) calculations, the atomic structures and band structures of two - dimensional thin - film materials of selenium and tellurium were determined. These structures and band characteristics are crucial for understanding the optical properties of the materials.
2. **Linear optical properties**: The real and imaginary parts of the optical dielectric functions of these materials were calculated, and their optical absorption characteristics in different polarization directions were analyzed, revealing the strong in - plane optical anisotropy of these materials.
3. **Nonlinear optical properties**:
- **Second - harmonic generation (SHG)**: The SHG coefficients were calculated, and it was found that the SHG coefficient of three - layer tellurium (TL Te) is more than 65 times higher than that of the widely used nonlinear optical material gallium nitride (GaN), the static SHG coefficient of two - layer tellurium (BL Te) is more than 100 times higher than that of GaN, and the SHG coefficient of single - layer selenium (ML Se) is also 6 times higher than that of GaN.
- **Linear electro - optic effect (LEO)**: The LEO coefficients were calculated, and it was found that the LEO coefficients of single - layer selenium and two - layer tellurium are 6 times and 5 times higher than those of the bulk GaN polytype, respectively.
- **Bulk photovoltaic effect (BPVE)**: A strong bulk photovoltaic effect of three - layer tellurium was predicted, and its shift - current conductivity is about 440 µA/V², which is higher than that of GeS, the largest BPVE material currently discovered.
4. **Mechanism analysis**: By analyzing the calculated electronic band structures, the authors pointed out that the strong nonlinear optical responses of these materials mainly originate from their low - dimensional structures, high anisotropy, directional covalent bonding, lone - pair electrons, and relatively small band gaps.
In conclusion, through detailed theoretical calculations, this paper reveals the great potential of two - dimensional thin - film materials of selenium and tellurium in the field of nonlinear optics, providing an important reference for the search for new high - performance nonlinear optical materials.