Predicting the Structural, Electronic and Magnetic Properties of Few Atomic-layer Polar Perovskite

Shaowen Xu,Fanhao Jia,Shunbo Hu,A. Sundaresan,Nikita Ter-Oganessian,A.P. Pyatakov,Jinrong Cheng,Jincang Zhang,Shixun Cao,Wei Ren

DOI: https://doi.org/10.1039/D0CP06671K

2020-10-27

Abstract:Density functional theory (DFT) calculations are performed to predict the structural, electronic and magnetic properties of electrically neutral or charged few-atomic-layer (AL) oxides whose parent systems are based on polar perovskite $KTaO_{3}$. Their properties vary greatly with the number of ALs ($n_{AL}$) and the stoichiometric ratio. In the few-AL limit ($n_{AL}\leqslant 14$), the even AL (EL) systems with chemical formula $(KTaO_{3})_{n}$ are semiconductors, while the odd AL (OL) systems with formula ($K_{n+1}Ta_{n}O_{3n+1}$ or $K_{n}Ta_{n+1}O_{3n+2}$) are half-metal except for the unique $KTa_{2}O_{5}$ case which is a semiconductor due to the large Peierls distortions. After reaching certain critical thickness ($n_{AL}>14$), the EL systems show ferromagnetic surface states, while ferromagnetism disappears in the OL systems. These predictions from fundamental complexity of polar perovskite when approaching the two-dimensional (2D) limit may be helpful for interpreting experimental observations later.

Materials Science,Computational Physics