High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka
DOI: https://doi.org/10.1103/PhysRevB.102.115101
2020-08-14
Abstract:We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.
Materials Science
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