Facilitating domain wall injection in magnetic nanowires by electrical means

Davi R. Rodrigues,Nils Sommer,Karin Everschor-Sitte

DOI: https://doi.org/10.1103/PhysRevB.101.224410

2020-04-16

Abstract:We investigate how to facilitate the injection of domain walls in chiral ferromagnetic nanowires by electrical means. We calculate the critical current density above which domain walls are injected into the nanowire depending on the material parameters and the source of interaction including spin-transfer torques as well as spin-orbit torques. We demonstrate that the Dzyaloshinskii-Moriya interaction can significantly reduce the required critical current to inject the types of domain walls favored by the Dzyaloshinskii-Moriya interaction. We find that in chiral magnets it is only possible to shed a single domain wall by means of spin-orbit torques, as they modify the ground state orientation of the system. In contrast, for spin-transfer-torque induced shedding of domain walls, we show that there exist two different critical current densities for the two different domain wall chiralities, respectively. Additionally, for the consecutive creation of domain walls by means of spin-transfer torques, we find that the interaction between the domain walls cannot be neglected and even may lead to the pairwise annihilation of consecutive domain walls with opposite chiralities.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to inject domain walls in chiral ferromagnetic nanowires by electrical means. Specifically, the author has studied how to use spin - transfer torque (STT) and spin - orbit torque (SOT) to reduce the critical current density required for injecting domain walls, and has explored the influence of these torques on domain - wall dynamics.

### Research Background

Domain walls are transition regions of magnetization directions in ferromagnetic materials. Due to their particle - like behavior and stability, they have broad application prospects in spintronic devices, such as magnetic sensors, racetrack memories, magnetic logic, domain - wall - based magnon nano - circuits, and artificial neurons and synapses. Therefore, controllable and low - power - consumption electrical methods are required to create magnetic domain walls.

### Main Problems

1. **Reducing Critical Current Density**: The author has studied how to reduce the critical current density required for injecting domain walls by electrical means (especially spin - transfer torque and spin - orbit torque).
2. **Domain - Wall Dynamics**: The author has explored the dynamic behaviors of different types of domain walls after injection, including their interactions and annihilation phenomena.
3. **Influence of Chiral Interactions**: The author has analyzed the influence of Dzyaloshinskii - Moriya interaction (DMI) on the injection and dynamics of domain walls in chiral magnets.

### Key Findings

- **STT - Induced Domain - Wall Injection**:
- In the presence of DMI, domain walls with two different chiralities have different critical current densities, resulting in different periods during periodic injection.
- There may be interactions between adjacent domain walls, and may even lead to pairwise annihilation of domain walls with opposite chiralities.

- **SOT - Induced Domain - Wall Injection**:
- Only a single domain wall can be injected because SOT will change the orientation of the ground state of the system.
- To inject another domain wall, the main magnetization direction along the nanowire needs to be restored to the original state first.

- **Role of DMI**:
- DMI can significantly reduce the required critical current density, making the injection of domain walls easier.
- When the DMI strength exceeds a certain critical value, the system changes from a ferromagnetic state to a helical state.

### Summary of Mathematical Formulas

- **Energy Expression**:
\[
E[m]=\int_{0}^{\infty}dx\left[\frac{J}{2}(\partial m)^{2}+\lambda(1 - m_{x}^{2})+Dm\cdot(\hat{x}\times\partial m)\right]
\]

- **LLGS Equation**:
\[
\dot{m}=-\gamma m\times H_{\text{eff}}+\alpha m\times\dot{m}-\tau_{\text{STT}}-\tau_{\text{SOT}}
\]
where
\[
H_{\text{eff}}=-\frac{1}{M_{s}}\frac{\delta E[m]}{\delta m}
\]

- **STT and SOT Terms**:
\[
\tau_{\text{STT}}=v\partial m-\beta vm\times\partial m
\]
\[
\tau_{\text{SOT}}=\tau_{\text{DL}}(\xi m\times\sigma + m\times(m\times\sigma))
\]

- **Critical Current Density**:
\[
j_{\text{STT}}^{c}=\frac{\gamma e}{P\mu_{B}}\left(\sqrt{2J\lambda}\mp D\right)
\]
\[
j_{\text{SOT}}^{c}=\frac{2el}{\xi\hbar\theta_{\text{Hall}}}\left(\lambda-\frac{D^{2}}{2J}\right)