Combinatorial Laser Molecular Beam Epitaxy System Integrated with Specialized Low-temperature Scanning Tunneling Microscopy

Ge He,Zhongxu Wei,Zhongpei Feng,Xiaodong Yu,Beiyi Zhu,Li Liu,Kui Jin,Jie Yuan,Qing Huan

DOI: https://doi.org/10.1063/1.5119686

2020-03-25

Abstract:We present a newly developed facility, comprised of a combinatorial laser molecular beam epitaxy system and an in-situ scanning tunneling microscopy (STM). This facility aims at accelerating the materials research in a highly efficient way, by advanced high-throughput film synthesis techniques and subsequent fast characterization of surface morphology and electronic states. Compared with uniform films deposited by conventional methods, the so-called combinatorial thin films will be beneficial to determining the accurate phase diagrams of different materials due to the improved control of parameters such as chemical substitution and sample thickness resulting from a rotarymask method. A specially designed STM working under low-temperature and ultra-high vacuum conditions is optimized for the characterization of combinatorial thin films, in an XY coarse motion range of 15 mm $\times$ 15 mm and with sub-micrometer location precision. The overall configuration as well as some key aspects like sample holder design, scanner head, and sample/tip/target transfer mechanism are described in detail. The performance of the device is demonstrated by synthesizing high-quality superconducting FeSe thin films with gradient thickness, imaging surfaces of highly oriented pyrolytic graphite, Au (111), Bi2Sr2CaCu2O8+{\delta} (BSCCO) and FeSe. In addition, we have also obtained clean noise spectra of tunneling junctions and the superconducting energy gap of BSCCO. The successful manufacturing of such a facility opens a new window for the next generation of equipment designed for experimental materials research.

Applied Physics,Materials Science,Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that in materials science research, traditional methods become inefficient when exploring new materials, especially in establishing accurate phase diagrams of multi - element compounds. Specifically, the traditional method of synthesizing and characterizing samples one by one, as the number of elements in the compound increases, the workload grows quadratically, and it is almost impossible to establish an accurate phase diagram. In particular, it is difficult to determine key chemical components such as quantum critical points (QCPs), which are crucial for understanding competing orders in condensed matter.

To solve this problem, the paper introduces a newly developed facility, which consists of a combinatorial laser molecular beam epitaxy system (Combi - LMBE) and an in - situ scanning tunneling microscope (STM). This facility aims to efficiently accelerate materials research through advanced high - throughput thin - film synthesis techniques and subsequent rapid characterization of surface topography and electronic states. Compared with the uniform thin films deposited by traditional methods, the so - called combinatorial thin films are more conducive to determining accurate phase diagrams of different materials because the rotation mask method improves the control of parameters (such as chemical substitution and sample thickness).

In addition, the paper also describes the overall configuration of the system and some key aspects, such as sample holder design, scanning head, and sample/tip/target transfer mechanisms, and demonstrates the performance of the equipment, for example, by synthesizing high - quality superconducting FeSe films with gradient thickness, and imaging highly oriented pyrolytic graphite, Au (111), Bi2Sr2CaCu2O8+δ (BSCCO), and FeSe surfaces. These achievements prove that the successful manufacture of this facility has opened a new window for the design of next - generation experimental materials research equipment.