Abstract:The electron correlations as triggered by on-site Coulomb repulsion within correlated vanadium dioxide (VO2) open up an emerging paradigm to explore new electronic phases and promising device applications. Apart from correlated electrical transport, the thermoelectric thermopower (S) of VO2 also undergoes abrupt variation across the critical temperature (TMIT) that sheds lights on the potential thermoelectric functionality. Nevertheless, bridging bi-functionality of VO2 associated with the thermistor and thermoelectric properties is still restricted by the limitation in improving the absolute magnitude of S and temperature coefficient of resistance (TCR). Herein, we demonstrate the widely adjustable metal–insulator transition (MIT) behavior and overlooked thermoelectric performance for Ti-substituted VO2 pellets that enable the bi-functionality strategy as combined with thermistor and thermoelectric properties. As-achieved tunable TMIT while maintaining large |TCR| is herein achieved for Ti-substituted VO2 pellets that enables practical device applications near room temperature. Apart from the well-known MIT functionality, we reveal the overlooked thermoelectric properties for VO2 via coherently co-sintering with TiO2 that introduces a new freedom (thermopower). Specifically, the largely enhanced thermopower observed for insulating V1−xTixO2 exceeds the one for pristine VO2 by five times, while the thermoelectric power factor for its metallic phase is comparable to typical organic or oxide thermoelectric materials. The presently achieved thermistor and thermoelectric bi-functionality (e.g., |S| > 100 μV/K and |TCR| > 1 K−1) for Ti-substituted VO2 pellets extends the horizons in material designs that combines such a bi-functionality to achieve both the passive and active sensing for improving the accuracy in thermal perturbations of VO2 bulk as infrared detectors near room temperature.

Thermoelectric probe of defect state induced by ionic liquid gating in vanadium dioxide

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Insight into Electronic and Structural Reorganizations for Defect-Induced Vo2 Metal-Insulator Transition

The Dynamic Phase Transition Modulation of Ion‐Liquid Gating VO2 Thin Film: Formation, Diffusion, and Recovery of Oxygen Vacancies

Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials

Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Electric-field Control of Li-doping Induced Phase Transition in VO2 Film with Crystal Facet-Dependence

Direct visualization of percolating metal-insulator transition in V 2 O 3 using scanning microwave impedance microscopy

Manipulating the metal–insulator transitions and thermoelectric bi-functionality for correlated vanadium dioxide pellets

Modulation of VO2 metal-insulator transition by co-doping of hydrogen and oxygen vacancy

Spectral Assignments in the Infrared Absorption Region and Anomalous Thermal Hysteresis in the Interband Electronic Transition of Vanadium Dioxide Films

Intrinsic optical properties of vanadium dioxide near the insulator-metal transition.

Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling

Hall Voltage Reversal and Structural Phase Transition in VO2 Thin Films

Electrostatic modification of infrared response in gated structures based on VO2

Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials

Reversible modulation of metal–insulator transition in VO 2 via chemically induced oxygen migration

Dynamically Tracking the Joule Heating Effect on the Voltage Induced Metal-Insulator Transition in VO2 Crystal Film

External Electric Field Manipulations On Structural Phase Transition Of Vanadium Dioxide Nanoparticles And Its Application In Field Effect Transistor

Metal-insulator transition in V 2 O 3 with intrinsic defects