Laser‐induced Hole Coherence and Spatial Self‐phase Modulation in the Anisotropic 3D Weyl Semimetal TaAs

Yixuan Huang,Hui Zhao,Zhilin Li,Yanling Wu,Fei Sun,Sheng Meng,Jimin Zhao,Lili. Hu
DOI: https://doi.org/10.1002/adma.202208362
IF: 29.4
2022-12-30
Advanced Materials
Abstract:Laser‐induced electron coherence is a fascinating topic in manipulating quantum materials. Recently, it has been shown that laser‐induced electron coherence in two‐dimensional (2D) materials can produce a third‐order nonlinear optical response spatial self‐phase modulation (SSPM), which has been used to develop a novel all‐optical switching scheme. However, such investigations have mainly focused on electron coherence, whereas laser‐induced hole coherence is rarely explored. Here, we report on the observation of the optical Kerr effect in three‐dimensional (3D) Weyl semimetal TaAs flakes. The nonlinear susceptibility (χ(3)) is obtained, which exhibits a surprisingly high value (with χone−layer(3) = 9.9×10−9 e.s.u. or 1.4×10−16 m2/V2 at 532 nm). This could not be explained by the conventional electron mobility, but could be well understood by the unique high anisotropic hole mobility of TaAs. The Wind Chime Model and χ(3)‐carrier mobility correlation adequately explain the results, suggesting the crucial role of laser‐induced non‐local ac hole coherence. Our observations extend the understanding of SSPM from 2D to 3D quantum materials with anisotropic carrier mobility, and from electron coherence to hole coherence. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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