Nanocrystalline Cubic Silicon Carbide: A Route to Superhardness

Rongxin Sun,Xudong Wei,Wentao Hu,Pan Ying,Yingju Wu,Linyan Wang,Shuai Chen,Xiang Zhang,Mengdong Ma,Dongli Yu,Lin Wang,Guoying Gao,Bo Xu,Yongjun Tian

DOI: https://doi.org/10.1002/smll.202201212

IF: 13.3

2022-04-08

Small

Abstract:The dense cubic silicon carbide bulk sintered at 25 GPa and 1400 °C, with an average grain size of ≈10 nm, exhibits a remarkable Vickers hardness of 41.5 GPa, surpassing the superhard threshold of 40 GPa.Superhard materials other than diamond and cubic boron nitride have been actively pursued in the past two decades. Cubic silicon carbide, i.e., β‐SiC, is a well‐known hard material with typical hardness <30 GPa. Although nanostructuring has been proven to be effective in enhancing materials' hardness by virtue of the Hall–Petch effect, it remains a significant challenge to improve hardness of β‐SiC beyond the superhard threshold of 40 GPa. Here, the fabrication of nanocrystalline β‐SiC bulks is reported by sintering nanoparticles under high pressure and high temperature. These β‐SiC bulks are densely sintered with average grain sizes down to 10 nm depending on the sintering conditions, and the Vickers hardness increases with decreasing grain size following the Hall–Petch relation. Particularly, the bulk sintered under 25 GPa and 1400 °C shows an average grain size of 10 nm and an asymptotic Vickers hardness of 41.5 GPa. Boosting the hardness of β‐SiC over the superhard threshold signifies an important progress in superhard materials research. A broader family of superhard materials is in sight through successful implementation of nanostructuring in other hard materials such as BP.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology