Abstract:Semiconductor InSb nanowires are expected to provide an excellent material platform for the study of Majorana fermions in solid state systems. Here, we report on the realization of a Nb-InSb nanowire-Nb hybrid quantum device and the observation of a zero-bias conductance peak structure in the device. An InSb nanowire quantum dot is formed in the device between the two Nb contacts. Due to the proximity effect, the InSb nanowire segments covered by the superconductor Nb contacts turn to superconductors with a superconducting energy gap Delta(InSb) similar to 0.25 meV. A tunable critical supercurrent is observed in the device in high back gate voltage regions in which the Fermi level in the InSb nanowire is located above the tunneling barriers of the quantum dot and the device is open to conduction. When a perpendicular magnetic field is applied to the devices, the critical supercurrent is seen to decrease as the magnetic field increases. However, at sufficiently low back gate voltages, the device shows the quasi-particle Coulomb blockade characteristics and the supercurrent is strongly suppressed even at zero magnetic field. This transport characteristic changes when a perpendicular magnetic field stronger than a critical value, at which the Zeeman energy in the InSb nanowire is E-z similar to Delta(Insb), is applied to the device. In this case, the transport measurements show a conductance peak at the zero bias voltage and the entire InSb nanowire in the device behaves as in a topological superconductor phase. We also show that this zero-bias conductance peak structure can persist over a large range of applied magnetic fields and could be interpreted as a transport signature of Majorana fermions in the InSb nanowire.

Zero-bias anomalies in electrochemically fabricated nanojunctions

Zero-Bias Anomaly in One-Dimensional Ultrathin Metallic Nanowires

Anomalous Zero-Bias Conductance Peak in A Nb-Insb Nanowire-Nb Hybrid Device

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Zero-bias anomaly in one-dimensional tunneling contacts

Effect of Exchange-Type Zero-Bias Anomaly on Single-Electron Tunneling of Au Nanoparticles

Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires

Electron phase shift at the zero-bias anomaly of quantum point contacts

Majorana-like Coulomb spectroscopy in the absence of zero bias peaks

Theory of the Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling Via Impurities

Phonon-assisted zero bias anomaly in a single-molecule quantum dot coupled to the Luttinger liquid leads

Negative Differential Conductance Effect and Electrical Anisotropy of 2D ZrB2 Monolayers

Ubiquitous non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

The Zero-Bias Anomaly Conductance Of A Strongly Correlated Dot Coupled To Luttinger Liquid Leads

Electron temperature and tunnel coupling dependence of zero-bias and almost-zero-bias conductance peaks in Majorana nanowires

Conductance of Small Molecular Junctions

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

A new view on the origin of zero-bias anomalies of Co atoms atop noble metal surfaces

Zero energy bound states in tunneling conductance spectra at the interface of an s-wave superconductor and a topological insulator in NbN-$Bi_2Se_3$-Au thin film junctions

Laterally proximized aluminum tunnel junctions