A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor
Mengshuang Chi,Yilin Zhao,Xiang Zhang,Mengmeng Jia,Aifang Yu,Zhong Lin Wang,Junyi Zhai
DOI: https://doi.org/10.1002/adfm.202307901
IF: 19
2023-09-02
Advanced Functional Materials
Abstract:By using a magnetostrictive/ferroelectric laminated structure, magnetic field‐induced biaxial strain could be efficiently transferred to piezotronic devices. The charge carrier transport and corresponding drain current of the piezotronic devices can be directly modulated by either the applied magnetic field or external strain. The device exhibits high sensitivity with on/off ratio of 1700% and a gauge factor as high as 2.3 × 104. Piezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology