Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Modification of thermal transport in few-layer MoS 2 by atomic-level defect engineering

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Enhancing heat transport in MoS2 via defect-engineering

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Influence of Atomic-Scale Defect on Thermal Conductivity of Single-Layer MoS2 Sheet

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Beyond Perturbation: Role of Vacancy-Induced Localized Phonon States in Thermal Transport of Monolayer MoS2

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Substrate Modified Thermal Stability Of Mono- And Few-Layer Mos2

Hopping Transport Through Defect-Induced Localized States in Molybdenum Disulphide

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Electron transport in MoS2 and its applications in devices

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Multi-terminal Transport Measurements of MoS2 Using a Van Der Waals Heterostructure Device Platform.

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Giant Thermal Conductivity Enhancement in Multilayer MoS2 under Highly Compressive Strain

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor