Abstract:Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of \textit{ad-hoc} molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light onto the theoretical and experimental works, we provide a guide for improving the electronic performance of the 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor

Logical Integration Device for Two-Dimensional Semiconductor Transition Metal Sulfide

Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Electrically-Driven Two-Dimensional Semiconductor Microcavity Laser

Engineering the Interfacing of Molecules with 2D Transition Metal Dichalcogenides: Enhanced Multifunctional Electronics

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Generating intense electric fields in 2D materials by dual ionic gating

Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts