Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Optical Link ASICs for the LHC Upgrade

ATLAS Pixel Opto-Electronics

The locality problem for two tastes of staggered fermions

Optical Data Transmission ASICs for the High-Luminosity LHC (HL-LHC) Experiments

The 120Gbps VCSEL Array Based Optical Transmitter (ATx) Development for the High-Luminosity LHC (HL-LHC) Experiments

Pixel front-end development in 65 nm CMOS technology

The new radiation-hard optical links for the ATLAS pixel detector

Study of the Radiation Hardness of Vcsel and Pin Arrays

LOCld65, A Dual-Channel VCSEL Driver ASIC For Detector Front-End Readout

FATALIC: A novel CMOS front-end readout ASIC for the ATLAS Tile Calorimeter

Radiation-Hard Opto-Link for the Atlas Pixel Detector

The VCSEL-based Array Optical Transmitter (ATx) Development Towards 120-Gbps Link for Collider Detector: Development Update

Design and performance of a TDC ASIC for the upgrade of the ATLAS Monitored Drift Tube detector

A 10 Gbps Driver/Receiver ASIC and Optical Modules for Particle Physics Experiments

Test and performance of the LiTE-DTU ASIC for the HL-LHC upgrade of the CMS ECAL barrel

Radiation Hardness of Two CMOS Prototypes for the ATLAS HL-LHC Upgrade Project.

New Results on ATLAS Pixel Opto-Link

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Characterization of a gigabit transceiver for the ATLAS inner tracker pixel detector readout upgrade

A Novel Optical Package for ATLAS Pixel Detector