Abstract:In the last two decades we have assisted to a rush towards finding a 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the strongest contenders, particularly those based on materials possessing a wide band gap like silicon carbide (SiC). We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project (Engineering Silicon Carbide for Border and Port Security), co-funded by the NATO Science for Peace and Security Programme. The main goal was the development of technologies to support the fabrication of radiation-hard silicon carbide detectors of special nuclear materials. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4 H -SiC are closing the gap between gas- and semiconductor-based detectors regarding their sensitivity.

Precise measurement of the 7 Be electron capture decay half-life in Silicon Carbide

High precision measurement of the half-life of the 391.6 keV metastable level in

Half-life of 31Si

Measurement of Difference of Half-Life of 7be in Be and Au

First direct electron-capture -value measurement toward high-precision searches for neutrino physics beyond the Standard Model

Precise measurement of the 222Rn half-life: a probe to monitor the stability of radioactivity

First direct $^{7}$Be electron capture $Q$-value measurement towards high-precision BSM neutrino physics searches

Measurement of the $^{14}$C spectrum with Silicon Drift Detectors: towards the study of forbidden $β$ transitions

A new method of measuring the half-life of ^{10}C

Measurement of the 2$νββ$ Decay Half-Life of Se-82 with the Global CUPID-0 Background Model

Properties Measurement of Silicon Carbide Detector

Simultaneous Measurement of the Half-Life and Spectral Shape of ^{115}In β Decay with an Indium Iodide Cryogenic Calorimeter

Radioactive contamination of BaF2 crystal scintillator

4H-Silicon Carbide as particle detector for high-intensity ion beams

Precise Lifetime Measurement of the Cesium $5^2D_{5/2}$ State

New limits on $2\varepsilon$, $\varepsilonβ^+$ and $2β^+$ decay of $^{136}$Ce and $^{138}$Ce with deeply purified cerium sample

Silicon carbide diodes for neutron detection

Experimental validation of a spectroscopic gamma-ray detector based on a LaBr3 scintillator towards real-time dose monitoring in BNCT

Measurements of the Quantum Yield of Silicon using Geiger-mode Avalanching Photodetectors

New studies on the radiopurity and performances of Cs 2 ZrCl 6 crystal scintillators

SiC based beam monitoring system for particle rates from kHz to GHz