The contact barrier of a 1T′/2H MoS 2 heterophase bilayer and its modulation by adatom and strain: a first-principles study

Jie Sun,Haoyun Dou,Guangping Zhang,Jiancai Leng

DOI: https://doi.org/10.1039/d1cp00504a

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:The contact nature of the 1T′/2H MoS 2 heterophase bilayer is tuned from Schottky to Ohmic by adatom and strain.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS2 heterostructure

Qian Wang,Zhenjun Song,Junhui Tao,Haiqin Jin,Sha Li,Yuran Wang,Xuejuan Liu,Lin Zhang

DOI: https://doi.org/10.1039/d2ra07949f

IF: 4.036

2023-01-20

RSC Advances

Abstract:Designing a specific heterojunction by assembling suitable two-dimensional (2D) semiconductors has shown significant potential in next-generation micro-nano electronic devices. In this paper, we study the structural and electronic properties of graphene–MoS 2 (Gr–MoS 2 ) heterostructures with in-plain biaxial strain using density functional theory. It is found that the interaction between graphene and monolayer MoS 2 is characterized by a weak van der Waals interlayer coupling with the stable layer spacing of 3.39 Å and binding energy of 0.35 J m −2 . In the presence of MoS 2 , the linear bands on the Dirac cone of graphene are slightly split. A tiny band gap about 1.2 meV opens in the Gr–MoS 2 heterojunction due to the breaking of sublattice symmetry, and it could be effectively modulated by strain. Furthermore, an n-type Schottky contact is formed at the Gr–MoS 2 interface with a Schottky barrier height of 0.33 eV, which can be effectively modulated by in-plane strain. Especially, an n-type ohmic contact is obtained when 6% tensile strain is imposed. The appearance of the non-zero band gap in graphene has opened up new possibilities for its application and the ohmic contact predicts the Gr–MoS 2 van der Waals heterojunction nanocomposite as a competitive candidate in next-generation optoelectronics and Schottky devices.

chemistry, multidisciplinary
2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

Zhiguo Wang

DOI: https://doi.org/10.1039/C8TC04951C

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted much scientific attention for applications in nanoelectronic and optoelectronic devices. The physical and chemical properties of 2D TMDs depend on their phase structures. In this study, electron doping-induced 2H → 1T′ structural transformation of MoS2, Janus MoSSe and MoSTe monolayers was studied by using density functional theory. Phonon dispersion calculation showed that both 2H- and 1T′-MoSX (X–S, Se and Te) monolayers were dynamically stable. Janus monolayer 2H-MoSX exhibited band gap of 1.0–1.68 eV, whereas Janus monolayer 1T′-MoSX was found to be a semiconductor with narrow band gap of 0.13–0.26 eV. The critical values of electron concentration to trigger 2H → 1T′ structural phase transformation decreased as X atom changed from S to Te in MoSX (X–S, Se and Te) monolayer. The in-plane stiffness decreased with increasing electron concentration for 2H-phase, whereas that of the 1T′-phase changed slightly with electron concentration; thus, electron doping destabilized the crystal structure of 2H-phase. The 1T′-phase could provide an efficient hole injection contact to 2H-MoS2 for use in nano-electronic devices.
Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Wenchao Chen,Jean-Pierre Leburton,Wen-Yan Yin,Erping Li

DOI: https://doi.org/10.1109/ted.2018.2866505

2018-01-01

Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.
A new insight for ohmic contacts to MoS 2 : by tuning MoS 2 affinity energies but not metal work-functions.

Qian Wang,Bei Deng,Xingqiang Shi

DOI: https://doi.org/10.1039/c7cp05109c

2017-01-01

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have recently attracted tremendous interest for fundamental studies and applications. High contact resistances between the metal electrodes and the 2D TMDCs, usually composed of a tunneling barrier (TB) and a Schottky barrier (SB), are the key bottleneck to the realization of high performance devices based on such systems. Here, from van der Waals density functional theory calculations, we demonstrate that strain can provide a feasible means to reduce the contact resistances between, for example, 2D semiconductor MoS and metal surfaces, in both strong and weak coupling regimes. Both the SB and TB are lowered significantly with the increasing tensile strain in both the coupling regimes. Especially, the SB can reduce to zero in all configurations considered, with tensile strain increasing to ∼4% or above. The mechanism of SB reduction under tensile strain is attributed to the increase of the MoS affinity energy since the monolayer MoS conduction band minimum (CBm) is derived from anti-bonding states. Thus, the SB in other semiconducting TMDCs with an anti-bonding CBm (for n-type contact) could also be reduced to zero by tensile strain. Our discoveries thus shed a new and general light on minimizing the contact resistance of semiconducting TMDCs-metal based contacts and this can also prove applicable to other 2D semiconductors, e.g. phosphorene.
First principles studies on the electronic and contact properties of single layer 2H-MoS 2 /1T′-MX 2 heterojunctions

Jiao Yu,Cai-Juan Xia,Zhen-Yang Hu,Jian-Ping Sun,Xiao-Peng Hao,Lu-Xia Wang,Qing-Long Fang

DOI: https://doi.org/10.1039/d1cp05077j

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) transition metal chalcogenide (TMD) field-effect transistors (FETs) are constructed via in-plane heterojunction contacts between the semiconducting 2H phase (as the channel) and the metallic 1T′ phase (as the electrode).

chemistry, physical,physics, atomic, molecular & chemical
Electronic and Transport Properties of 2H 1−x 1T X MoS 2 Hybrid Structure: A First-Principle Study

Jie Sun,Na Lin,Cheng Tang,Haoyuan Wang,Hao Ren,Xian Zhao

DOI: https://doi.org/10.1016/j.physe.2017.04.026

IF: 3.369

2017-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:The impure 1T phase (mixed with 2H phase) MoS2 electrodes adopted in 2H phase MoS2-based Field effect transistors (FETs) has been demonstrated efficiently decreasing the contact resistance in recent experiment. Here, first principles calculations are carried out to reveal the electronic and transport properties of the hybrid electrode 2H1−x1Tx MoS2 with different 1T compositions. Our calculated results show that the stability of hybrid 2H1−x1Tx MoS2 system is decreased as increasing the concentration of 1T phase. The band gaps are largely reduced as introducing 1T phase to 2H phase MoS2. The occurrence of flat band around the Fermi level of the hybrid 2H1−x1Tx MoS2 system is not beneficial for the electronic transport. Different transmission performances of each configuration indicate that transmission probabilities are not only subjected to the concentration of 1T phase, but also depending on the specific arrangement of the two phase structure. It is found that binding energies of O2 molecule adsorbed on the phase boundaries of the hybrid 2H1−x1Tx MoS2 is enlarged compared with that on pure 2H and 1T MoS2, accompanying with charge transfer from the substrate to adsorbate. To protect the hybrid 2H1−x1Tx MoS2 state from molecule adsorption, we predict that BN sheet can be used as an effective encapsulating material.
Structure and Dynamics of the Electronic Hetero-Interfaces in MoS2 by First-Principles Simulations.

Xiaolong Zou,Zhuhua Zhang,Xiaobin Chen,Boris I. Yakobson

DOI: https://doi.org/10.1021/acs.jpclett.0c00147

IF: 6.888

2020-01-01

The Journal of Physical Chemistry Letters

Abstract:The transformation of 2H-MoS2 from semiconducting 2H to metallic 1T phases is critical for its electrochemical and device applications, where the formation and dynamics of electronic heterostructures play a key role. Using first-principles calculations, we explore detailed atomic structures and migration processes of such interfaces. While armchair interfacial bonding is severely weakened by the distortion in 1T phase, stable structures form for either Mo- or S-orientated zigzag interfaces with low contact resistance. Different zigzag interfaces have distinct local bonding, which renders interface migration behaviors strongly anisotropic. For Mo-oriented interfaces, both a low formation energy and the migration barrier of the kinks make them prone to fast migration. In contrast, the S-oriented interfaces are more immobile due to the high formation energies of kinks and thus dominate the physical properties of the whole heterostructures. Our findings not only explain various experimental observations but also provide insights into phase transition behaviors in 2D MoS2.
First Principles Studies on Electronic and Transport Properties of Edge Contact Graphene-Mos2 Heterostructure

Jie Sun,Na Lin,Cheng Tang,Haoyuan Wang,Hao Ren,Xian Zhao

DOI: https://doi.org/10.1016/j.commatsci.2017.03.004

IF: 3.572

2017-01-01

Computational Materials Science

Abstract:Nanodevice based on MoS2 channel lateral connecting with graphene electrode was fabricated in recent experiment. In present paper, first principles calculations are carried out to reveal the relationship between contact geometries and electrical properties of graphene-MoS2 heterostructure. Four different contact edges between graphene and MoS2, namely, Armchair-Armchair, Zigzag-Armchair, Armchair-Zigzag, Zigzag-Zigzag, are investigated. Calculations indicate that MoS2 will be metalized as a consequence of junction formation with graphene. The metallic states located at Fermi level are mainly laid at the contact interface and dominated by 4d states of Mo atom as well as 2p states of both S and C atoms. Different contact geometries of graphene-MoS2 result in different charge transfer values in contact interfaces. Investigation on band alignments reveals that n-type Schottky contacts are formed in four graphene-MoS2 lateral heterostructures with barrier heights of 0.45–0.75eV, which are larger than those of edge contact with Sc and Ti metals. The transmission gap of each configuration obtained using a two-probe system is unexpectedly larger than the intrinsic band gap of MoS2. The discrepancies of current-voltage behavior in two represented configurations demonstrate that contact geometries play an important role in electronic transport properties of graphene-MoS2 junctions.
Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Joon-Seok Kim,Nikhilesh Maity,Myungsoo Kim,Suyu Fu,Rinkle Juneja,Abhishek K. Singh,Deji Akinwande,Jung-Fu Lin

DOI: https://doi.org/10.48550/arXiv.2108.13573

2021-08-31

Abstract:Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in MoS2/WS2 heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations show pressure-enhanced interlayer interaction of the heterobilayer. Photoluminescence enhancement factor {\eta} of WS2 in heterobilayer decreases by five times up to ~4 GPa, suggesting a strong ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity, indicating enhanced CT. Theoretical calculations show that orbital switching in the conduction bands is responsible for the modulation of the transfers. Our findings provide a compelling approach towards effective mechanical control of CT and ET in 2D excitonic devices.

Materials Science
The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Xin Pei,Xiaohui Hu,Tao Xu,Litao Sun

DOI: https://doi.org/10.3390/nano14131075

2024-06-24

Abstract:The contact resistance formed between MoS2 and metal electrodes plays a key role in MoS2-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS2-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS2-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew-Burke-Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS2-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS2-metal vdW interfaces. Furthermore, as the layer number of MoS2 increases from 1L to 4L, the FLP effect is first weakened and then increased, which can be attributed to the charge redistribution at the MoS2-metal and MoS2-MoS2 interfaces. In addition, the p-type Schottky contact can be achieved in 1L-4L MoS2-Pt, 3L MoS2-Au, and 2L-3L MoS2-Pd vdW interfaces, which is useful for realizing complementary metal oxide semiconductor (CMOS) logic circuits. These findings indicated that the FLP and contact types can be effectively modulated at MoS2-metal vdW interfaces by selecting the layer number of MoS2.
MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Bin Ouyang,Shiyun Xiong,Zhi Yang,Yuhang Jing,Yongjie Wang

DOI: https://doi.org/10.48550/arXiv.1703.04155

2017-03-13

Abstract:Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and flexible method, however, cannot be achieved in engineering monolayer MoS2 phase transition because the critical biaxial strain required (~15%) is much larger than measured elastic limit (~11%). In this study, employing density functional theoretical calculations, it has been found out that with the forming of heterostructure between MoS2 with buckled 2D materials such as silicence, germanene and stanene, only a small strain can trigger the phase transition. As being suggested by the constructed phase stability diagram, biaxial deformation as low as 3% in MoS2/silicene and MoS2/stanene sandwich structure, would be sufficient to induce the structural phase transition in MoS2 lattice. This strain falls well within experimental elastic limit, thus would be feasible to realize in experiment. The origin of such behavior can be understood as strain induced interlayer covalent bond formation, which finally make MoS2 lattice more sensitive to external strain. This theoretical work provides one realistic route for achieving flexible phase stabilities in experimental design.

Materials Science
Tuning the N-Type Contact of Graphene on Janus MoSSe Monolayer by Strain and Electric Field

Chen Yu,Xiaoxing Cheng,Chunyu Wang,Zhiguo Wang

DOI: https://doi.org/10.1016/j.physe.2019.02.027

IF: 3.369

2019-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:The interfacial contact between graphene and Janus MoSSe monolayer was investigated using first-principles calculations. Results show that the intrinsic electronic properties of the freestanding graphene and Janus MoSSe monolayer are well preserved in the van der Waals (vdW) graphene/MoSSe heterostructures. An n-type Schottky contact is formed in the interface of graphene and Janus MoSSe monolayer with a Schottky barrier height (SBH) of 0.07 eV. The SBH can be tuned by the external electric field and in-plane mechanical strain. SBH decreases with the increase of positive electric field and tensile strain. The n-type Schottky contact transfers to the Ohmic contact when the applied electric field is larger than 0.4 V/angstrom or the tensile strain exceeds 8%. These results can provide helpful guide in the design of nanoscale devices based on the vdW heterostructures.
Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

Fangqi Yu,Weihua Yang,Rao Huang,Lei Li,Yang Zhang,Yuhua Wen

DOI: https://doi.org/10.1103/physrevmaterials.8.014003

IF: 3.98

2024-01-01

Physical Review Materials

Abstract:As a recent member of the two-dimensional (2D) van der Waals (vdW) heterostructures, the WSe2/CrSe2 heterostructure has received considerable attention due to its fascinating characteristics compared with the constituent 2D materials. In this paper, we performed first-principles calculations to investigate its structural, electronic, and magnetic properties and explored the effects of interlayer and in-plane strains on these properties. Our results reveal that the antiferromagnetic (AFM) ground state in the CrSe2 layer of the heterostructure is maintained owing to weak vdW interactions between the CrSe2 and WSe2 layers. However, the AFM state can be transformed into the ferromagnetic state at interlayer compressive strain of -19% or in-plane tensile strain of 2.5%. Moreover, the WSe2/CrSe2 heterointerface belongs to the metal-semiconductor interface and exhibits p-type ohmic contact and low contact resistance. The transition from p-type ohmic contact to p-type Schottky contact or n-type Schottky contact can be achieved by interlayer or in-plane strain engineering, which is associated with the strain-induced energy shifts of the valence band maximum and conduction band minimum of WSe2. Additionally, the tunneling probability of the heterostructure rises dramatically (up to 100%) with interlayer coupling, which is favorable for carrier transport at the heterointerface. Our findings demonstrate that strain engineering is an effective way of modulating metal-semiconductor interfaces and provide theoretical guidance for designing electronic and magnetic devices based on the WSe2/CrSe2 vdW heterostructure as well as broadening its applications in future functional devices.
First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Son-Tung Nguyen,Nguyen V. Hieu,Huy Le-Quoc,Kien Nguyen-Ba,Chuong V. Nguyen,Huynh V. Phuc,Nguyen Cuong

DOI: https://doi.org/10.1039/d4na00193a

IF: 5.598

2024-05-22

Nanoscale Advances

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures are considered as promising candidate for realizing multifunctional applications, including photodetectors, field effect transistor and solar cells. In this work, we performed first-principles calculations to design the 2D vdW MoTe2/MoS2 heterostructure and investigate its electronic properties, contact types and the impact of the electric field and in-plane biaxial strain. We find that the MoTe2/MoS2 heterostructure is predicted to be structurally, thermally and mechanically stable. It is obvious that the weak vdW interactions are mainly dominated at the interface of the MoTe2/MoS2 heterostructure and thus it can be synthesized in recent experiments by the transfer method or chemical vapor deposition. The construction of vdW MoTe2/MoS2 heterostructure form staggered type II band alignment, effectively separating the electrons and holes at the interface and thereby extending the carrier lifetime. Interestingly, the electronic properties and contact types of type II vdW MoTe2/MoS2 heterostructure can be tailored under the application of external conditions, including electric field and in-plane biaxial strain. The semiconductor-semimetal-metal transition and type II - type I conversion can be achieved in the vdW MoTe2/MoS2 heterostructure. Our findings underscore the potential of the vdW MoTe2/MoS2 heterostructure for the design and fabrication of multifunctional applications, including electronics and optoelectronics.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
The Dependence of Interfacial Properties on the Layer Number in 1T′/2h-Mos2 Van Der Waals Heterostructures

Xiaoxing Chen,Zixiang Liu,Aijian Huang,Zhiguo Wang

DOI: https://doi.org/10.1016/j.physleta.2020.126747

IF: 2.707

2020-01-01

Physics Letters A

Abstract:Metallic 1T'-MoS2 monolayers are predicted to be efficient hole injection contacts for nanoelectronic devices composed of 2H-MoS2 monolayers. The layer number can affect the physical properties of two-dimensional materials. In this paper, the dependence of the interfacial properties of 1T'/2H-MoS2 van der Waals (vdW) heterojunctions on the layer number was studied using density functional theory. The calculation results show that 1T'-MoS2 forms p-type contacts with 2H-MoS2, and the p-type Schottky barrier height (SBH) is between -75 and 30 meV and depends on the number of 1T'-/2H-MoS2 layers. Thus, the efficiency of 1T'-MoS2 as a hole injection contact for 2H-MoS2 can be tuned by the layer number. This work provides a method for tuning the contact-resistance in nanodevices composed of 2H-MoS2. (C) 2020 Elsevier B.V. All rights reserved.
Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Xiangjiu Zhu,Hongxing Jiang,Yukai Zhang,Dandan Wang,Lin Fan,Yanli Chen,Xin Qu,Lihua Yang,Yang Liu

DOI: https://doi.org/10.3390/molecules28145607

IF: 4.6

2023-07-25

Molecules

Abstract:Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures (vdWHs) contact. We show that 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 form n-type Schottky contact (n-ShC type) and p-type Schottky contact (p-ShC type) with ultralow Schottky barrier height (SBH), respectively. This indicates that 1T-TaS2 can be considered as an effective metal contact with high charge injection efficiency for 2H-MoS2, 2H-WSe2 semiconductors. In addition, the electronic structure and interfacial properties of 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures can be transformed from n-type to p-type Schottky contact through the effect of layer spacing and the electric field. At the same time, the transition from Schottky contact to Ohmic contact can also occur by relying on the electric field and different interlayer spacing. Our results may provide a new approach for photoelectric application design based on metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures.

chemistry, multidisciplinary,biochemistry & molecular biology
Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Vladislav O Khaustov,Domenica Convertino,Janis Köster,Alexei A Zakharov,Michael J Mohn,Zewdu M Gebeyehu,Leonardo Martini,Simona Pace,Giovanni Marini,Matteo Calandra,Ute Kaiser,Stiven Forti,Camilla Coletti

DOI: https://doi.org/10.1021/acsanm.3c01314

2023-07-06

Abstract:Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T') phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T' phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T' phase transition. Microscopic and spectroscopic analyses of the MoTe2 crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T'/1H heterostructures, this work contributes to the development of MoTe2-based electronic and optoelectronic devices with low contact resistance.
Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Donglin Lu,Zhenqing Li,Congsheng Xu,Siwei Luo,Chaoyu He,Jun Li,Gang Guo,Guolin Hao,Xiang Qi,Jianxin Zhong

DOI: https://doi.org/10.1007/s12274-020-3155-4

IF: 9.9

2021-01-05

Nano Research

Abstract:Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure

Yutao Liu,Tinghong Gao

DOI: https://doi.org/10.1063/5.0164208

IF: 4.304

2023-09-01

The Journal of Chemical Physics

Abstract:The search for contact materials with low contact resistance and tunable Schottky barrier (SB) height of two-dimensional (2D) materials is important for improving the electronic performance. Inspired by the recently synthesized metallic Janus MoSH, this study employs first-principles calculations to investigate the electronic structure, mechanical properties, and interface characteristics of Janus MoSH/GaN and MoHS/GaN van der Waals (vdW) heterostructures. We find that both heterostructures exhibit isotropic mechanical properties and form p-type Schottky barrier contacts (p-ShC) and the SB height of MoHS/GaN is smaller than that of the MoSH/GaN heterostructure. The variation in SB height and contact type under biaxial strain and electric field is also studied for both vdW heterostructures, respectively. Compared to the MoSH/GaN heterostructure, the MoHS/GaN heterostructure can transition to Ohmic contact (OhC) under biaxial strain and electric field, making the S-face contact of MoSH with GaN a more effective contact approach. These findings could provide a new pathway for the design of controllable Schottky nanodevices and high-performance electronic devices on GaN-based vdW heterostructures.

chemistry, physical,physics, atomic, molecular & chemical
Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures

Sobhit Singh,Abdulrhman M. Alsharari,Sergio E. Ulloa,Aldo H. Romero

DOI: https://doi.org/10.48550/arXiv.1806.11469

2018-06-29

Materials Science

Abstract:Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der Waals interaction between the layers. However, the proximity of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in graphene, which is nearly three orders of magnitude larger than the intrinsic spin orbit coupling of pristine graphene. This opens a bandgap in graphene and further causes anticrossings of the spin-nondegenerate bands near the Dirac point. Lattice incommensurate graphene/MoS2 heterostructure exhibits interesting moire' patterns which have been observed in experiments. The electronic bandstructure of heterostructure is very sensitive to biaxial strain and interlayer twist. Although the Dirac cone of graphene remains intact and no charge-transfer between graphene and MoS2 layers occurs at ambient conditions, a strain-induced charge-transfer can be realized in graphene/MoS2 heterostructure. Application of a gate voltage reveals the occurrence of a topological phase transition in graphene/MoS2 heterostructure. In this chapter, we discuss the crystal structure, interlayer effects, electronic structure, spin states, and effects due to strain and substrate proximity on the electronic properties of graphene/MoS2 heterostructure. We further present an overview of the distinct topological quantum phases of graphene/MoS2 heterostructure and review the recent advancements in this field.

The contact barrier of a 1T′/2H MoS 2 heterophase bilayer and its modulation by adatom and strain: a first-principles study

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS2 heterostructure

2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

A new insight for ohmic contacts to MoS 2 : by tuning MoS 2 affinity energies but not metal work-functions.

First principles studies on the electronic and contact properties of single layer 2H-MoS 2 /1T′-MX 2 heterojunctions

Electronic and Transport Properties of 2H 1−x 1T X MoS 2 Hybrid Structure: A First-Principle Study

Structure and Dynamics of the Electronic Hetero-Interfaces in MoS2 by First-Principles Simulations.

First Principles Studies on Electronic and Transport Properties of Edge Contact Graphene-Mos2 Heterostructure

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Tuning the N-Type Contact of Graphene on Janus MoSSe Monolayer by Strain and Electric Field

Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

The Dependence of Interfacial Properties on the Layer Number in 1T′/2h-Mos2 Van Der Waals Heterostructures

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure

Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures