Abstract:A functional large-area transparent conductor (TC), consisting of two-dimensional (2D) Ag films sandwiched within indium tin oxide (ITO) layers has been developed for use in transparent photovoltaics (TPV) applications. This innovative solution harnesses the potential of 2D Ag films, which play a pivotal role in the creation of cost-effective optoelectronic devices with a focus on attributes like lightness, optical transparency, and compactness. The gained attention in 2D Ag film technology originates from the possibility of forming highly transparent, conducting film with an ultrathin Ag layer. Large-scale, uniform 2D Ag is commonly achieved by sputtering technique, limiting its application as the electrical window for thin-film optoelectronics attributed to the bombardment of high-energetic sputtered materials. The present study proposes a low-damage, sputtering procedure to utilize 2D Ag for electrical windows of Cu 2 O-based photovoltaics. A high surface-energy dielectric material, ITO, is adopted as a wetting platform for Ag film evolution, providing continuous Ag thin-film with a total transparency of 93% and sheet resistance of 4 Ω sq −1 . Importantly, ITO is explored as the interfacial layer to reduce the kinetic impact of sputtered Ag particles on Cu 2 O photo-absorber, enabling the development of large-scale Cu 2 O-based TPV (transparency of 43.1%) with signified power to Cu 2 O thickness ratio of 1.7. The results are achieved by investigating variable power conditions on the electrostatics of Cu 2 O TPV. Furthermore, the proposed TC, ITO/Ag/ITO, enables efficient power extraction from Cu 2 O TPV with enhanced power conversion efficiency of 122% compared to conventional solution-processed AgNW TC.

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